BU508D ST Microelectronics, Inc., BU508D Datasheet

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BU508D

Manufacturer Part Number
BU508D
Description
High Voltage Fast-switching NPN Power Transistor
Manufacturer
ST Microelectronics, Inc.
Datasheet

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APPLICATIONS:
DESCRIPTION
The BU208D, BU508D and BU508DFI are
manufactured
technology for cost-effective high performance
and uses a Hollow Emitter structure to enhance
switching speeds.
ABSOLUTE MAXIMUM RATINGS
June 1996
Symb ol
SGS-THOMSON PREFERRED SALESTYPES
HIGH VOLTAGE CAPABILITY
U.L. RECOGNISED ISOWATT218 PACKAGE
(U.L. FILE # E81734 (N)
JEDEC TO-3 METAL CASE
NPN TRANSISTOR WITH INTEGRATED
FREEWHEELING DIODE
HORIZONTAL DEFLECTION FOR COLOUR
TV
V
V
V
T
P
I
CEO
EBO
CES
I
CM
T
s tg
C
tot
j
Collector-Emitter Voltage (V
Collector-Emitter Voltage (I
Emitter-Base Voltage (I
Collector Current
Collector Peak Current (t
T otal Dissipation at T
Storage Temperature
Max. O perating Junction Temperature
using
Multiepitaxial
Parameter
HIGH VOLTAGE FASTSWITCHING NPN
c
= 25
C
p
= 0)
< 5 ms)
B
BE
o
C
= 0)
= 0)
Mesa
TO-218
BU208D/508D/508DFI
-65 to 150 -65 to 150
INTERNAL SCHEMATIC DIAGRAM
TO - 3
150
150
POWER TRANSISTOR
TO - 218
1
1
125
150
Valu e
2
1500
700
10
15
2
8
3
ISOWATT218
ISOW ATT218
-65 to 150
150
50
TO-3
1
Unit
o
o
W
2
V
V
V
A
A
C
C
3
1/8

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BU508D Summary of contents

Page 1

... FILE # E81734 (N) JEDEC TO-3 METAL CASE NPN TRANSISTOR WITH INTEGRATED FREEWHEELING DIODE APPLICATIONS: HORIZONTAL DEFLECTION FOR COLOUR TV DESCRIPTION The BU208D, BU508D and BU508DFI are manufactured using Multiepitaxial technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. ABSOLUTE MAXIMUM RATINGS ...

Page 2

BU208D/508D/508DFI THERMAL DATA R Thermal Resistance Junction-case thj -ca se ELECTRICAL CHARACTERISTICS (T Symbo l Parameter I Collector Cut-off CES Current ( Emitter Cut- off Current EBO ( Collector-Emitter CE(sat) Saturation Voltage ...

Page 3

DC Current Gain Base Emitter Saturation Voltage Switching Time Inductive Load (see figure 1) BU208D/508D/508DFI Collector Emitter Saturation Voltage Switching Time Inductive Load Switching Time Percentance vs. Case 3/8 ...

Page 4

BU208D/508D/508DFI Figure 1: Inductive Load Switching Test Circuits 4/8 ...

Page 5

TO-3 (H) MECHANICAL DATA mm DIM. MIN. TYP. A 11 10 30. BU208D/508D/508DFI inch MAX. MIN. TYP. 0.460 1.10 0.037 1.70 8.7 20.0 0.429 0.665 ...

Page 6

BU208D/508D/508DFI TO-218 (SOT-93) MECHANICAL DATA mm DIM. MIN. TYP. A 4 0.5 F 1.1 G 10.8 H 14.7 L2 – 3. – Ø ¯ 6/8 MAX. MIN. 4.9 0.185 1.37 ...

Page 7

ISOWATT218 MECHANICAL DATA mm DIM. MIN. TYP. A 5.35 C 3.3 D 2.9 D1 1.88 E 0.45 F 1.05 G 10.8 H 15.8 L1 20.8 L2 19.1 L3 22.8 L4 40.5 L5 4.85 L6 20.25 M 3.5 N 2.1 U ...

Page 8

BU208D/508D/508DFI Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequence s of use of such information nor for any infringement of patents or other rights of third parties which may results ...

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