BU508DX Philips Semiconductors (Acquired by NXP), BU508DX Datasheet - Page 4

• Manufacturer Part Number: BU508DX
• Description: BU508DX; Silicon Diffused Power Transistor
• Manufacturer: Philips Semiconductors (Acquired by NXP)

Philips Semiconductors
July 1998
Silicon Diffused Power Transistor
Fig.5. Typical collector-emitter saturation voltage.
Fig.6. Typical base-emitter saturation voltage.
0.9
0.7
0.5
0.3
0.1
0.8
0.6
0.4
0.2
1.4
1.2
0.8
0.6
1
0
1
0
0.1
VBESAT / V
VCESAT / V
IC = 4.5A
IC = 3A
V
V
CE
BE
sat = f (I
sat = f (I
1
IC = 6A
C
); parameter I
B
); parameter I
2
1
3
C
/I
C
IC / A
B
BU508AD
IB / A
BU508AD
10
4
4
Fig.7. Typical collector-emitter saturation voltage.
120
110
100
0.1
10
90
80
70
60
50
40
30
20
10
1
0.1
0
VCESAT/V
Fig.8. Normalised power dissipation.
0
PD%
PD% = 100 P
V
20
CE
sat = f (I
40
60
B
); parameter I
D
Ths / C
/P
1
D 25˚C
80
Normalised Power Derating
IB/A
with heatsink compound
= f (T
Product specification
100
IC = 4.5A
IC = 3A
IC = 6A
hs
C
120
BU508DX
)
BU508AD
Rev 1.200
140
10