BU508DX Philips Semiconductors (Acquired by NXP), BU508DX Datasheet - Page 5

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BU508DX

Manufacturer Part Number
BU508DX
Description
BU508DX; Silicon Diffused Power Transistor
Manufacturer
Philips Semiconductors (Acquired by NXP)
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BU508DX
Manufacturer:
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Part Number:
BU508DXI
Manufacturer:
ST
0
Philips Semiconductors
July 1998
Silicon Diffused Power Transistor
Fig.10. Forward bias safe operating area. T
I
II
NB: Mounted with heatsink compound and
0.001
0.01
0.01
100
0.1
0.1
1.0E-07
10
10
Region of permissible DC operation.
Extension for repetitive pulse operation.
30
the envelope.
1
1
Fig.9. Transient thermal impedance.
Zth K/W
1
IC / A
0.05
0.02
0.5
0.2
0.1
ICM max
IC max
Z
5 newton force on the centre of
0
th j-hs
1.0E-05
= f(t); parameter D = t
Ptot max
10
t / s
I
1E-03
P
D
= 0.01
100
t
p
T
1.0E-01
VCE / V
II
D =
p
/T
t
T
bu508ax
p
t
1000
tp =
10 us
100 us
1 ms
10 ms
DC
1.0E+1
hs
= 25˚C
5
Fig.11. Forward bias safe operating area. T
I
II
NB: Mounted without heatsink compound and
0.01
100
0.1
10
Region of permissible DC operation.
Extension for repetitive pulse operation.
30
the envelope.
1
1
IC / A
ICM max
IC max
5 newton force on the centre of
Ptot max
10
I
= 0.01
100
Product specification
VCE / V
II
BU508DX
1000
tp =
10 us
100 us
1 ms
10 ms
DC
hs
Rev 1.200
= 25˚C

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