KSC2751 Fairchild Semiconductor, KSC2751 Datasheet

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KSC2751

Manufacturer Part Number
KSC2751
Description
NPN Epitaxial Silicon Transistor
Manufacturer
Fairchild Semiconductor
Datasheet
©2000 Fairchild Semiconductor International
High Speed
High Current Switching Industrial Use
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
* PW 300 s, Duty Cycle 10%
Electrical Characteristics
* Pulse Test: PW 350 s, Duty Cycle 2% Pulsed
h
V
I
I
I
P
V
I
h
h
t
t
t
V
V
T
T
V
V
I
I
I
I
h
V
V
FE
C
CP
B
CEX2
ON
STG
F
CBO
CER
CEX1
EBO
CEX
FE1
FE2
FE3
EBO
C
J
STG
Symbol
CBO
CEO
CEO
CEX
CE
BE
Symbol
(sat)
(sat)
Classificntion
(sus)2
(sus)1
(sus)
Classification
h
FE1
Collector Cut-off Curren
* DC Current Gain
* Collector-Emitter Saturation Voltage
* Base Emitter ON Voltage
Collector-Emitter Sustaining Voltage
Collector-Emitter Sustaining Voltage
Collector-Emitter Sustaining Voltage
Collector Cut-off Current
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
Turn ON Time
Storage Time
Fall Time
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current (DC)
Collector Dissipation (T
Junction Temperature
Storage Temperature
Parameter
15 ~ 30
N
C
T
=25 C)
C
=25 C unless otherwise noted
Parameter
T
C
=25 C unless otherwise noted
KSC2751
I
V
V
T
I
R
I
I
T
T
V
V
T
V
V
V
V
I
I
V
C
B1
C
C
C
C
C
C
C
C
CE
CE
CC
CB
CE
EB
CE
CE
CE
L
= 20A, I
= 10A, I
= 10A, I
= 10A, I
= 10A, I
20 ~ 40
= 125 C, L = 180 H,Clamped
= 125
= -I
=125 C, l = 180 H, Clamped
= 125 C
= 15
= 400V, V
= 400V, V
= 150V, I
= 400V, I
= 400V, R
= 5V, I
= 5V, I
= 5V, I
= 5V, I
R
B2
Test Condition
= 2A
B1
B1
B1
B
B
C
C
C
C
= 2A
= 2A
= 2A, L = 50 H
= -I
= 4A, -I
= 0
= 2A
= 5A
= 10A
C
BE
BE
E
BE
= 10A
= 0
(off) = -1.5V
(off) = -1.5V @
B2
= 50
= 2A
B2
= 2A
@
30 ~ 60
1.Base 2.Collector 3.Emitter
1
O
- 55 ~ 150
Min
400
450
400
Value
15
10
7
500
400
120
150
7.5
15
30
7
Typ
0.3
35
TO-3P
1
40 ~ 80
Max
100
100
1.5
2.5
0.7
Y
10
80
Rev. A, February 2000
1
2
1
1
Units
W
V
V
V
A
A
A
C
C
Units
mA
mA
V
V
V
V
V
A
A
A
s
s
s

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KSC2751 Summary of contents

Page 1

... Turn ON Time ON t Storage Time STG t Fall Time F * Pulse Test: PW 350 s, Duty Cycle 2% Pulsed h Classificntion FE Classification h FE1 ©2000 Fairchild Semiconductor International KSC2751 T =25 C unless otherwise noted C Parameter = =25 C unless otherwise noted C Test Condition I = 10A 2A 10A, I ...

Page 2

... V (sat) BE 0.1 V (sat) CE 0.01 0.01 0 [A], COLLECTOR CURRENT C Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 100 I (Pulse) MAX 0.1 0. [V], COLLECTOR-EMITTER VOLTAGE CE Figure 5. Safe Operating Area ©2000 Fairchild Semiconductor International 1000 1.4A B 100 ...

Page 3

... Typical Characteristics 160 140 120 100 100 C], CASE TEMPERATURE C Figure 7. Derating Curve of Safe Operating Area ©2000 Fairchild Semiconductor International (Continued) 160 140 120 100 125 150 175 0 25 Figure 8. Power Derating 50 75 100 125 ...

Page 4

... Package Demensions ø3.20 0.10 2.00 0.20 3.00 0.20 1.00 0.20 5.45TYP [5.45 ] 0.30 ©2000 Fairchild Semiconductor International TO-3P 15.60 0.20 13.60 0.20 9.60 0.20 5.45TYP [5.45 ] 0.30 4.80 0.20 +0.15 1.50 –0.05 1.40 0.20 +0.15 0.60 –0.05 Dimensions in Millimeters Rev. A, February 2000 ...

Page 5

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ CMOS™ FACT™ FACT Quiet Series™ ® ...

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