KSH112-I

Manufacturer Part NumberKSH112-I
DescriptionD-pak for Surface Mount Applications
ManufacturerFairchild Semiconductor
KSH112-I datasheet
 
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D-PAK for Surface Mount Applications
• High DC Current Gain
• Built-in a Damper Diode at E-C
• Lead Formed for Surface Mount Applications (No Suffix)
• Straight Lead (I-PAK, “ - I “ Suffix)
• Electrically Similar to Popular TIP112
NPN Silicon Darlington Transistor
Absolute Maximum Ratings
Symbol
Parameter
V
Collector-Base Voltage
CBO
V
Collector-Emitter Voltage
CEO
V
Emitter-Base Voltage
EBO
I
Collector Current (DC)
C
I
Collector Current (Pulse)
CP
I
Base Current
B
P
Collector Dissipation (T
C
Collector Dissipation (T
T
Junction Temperature
J
T
Storage Temperature
STG
Electrical Characteristics
Symbol
Parameter
V
(sus)
Collector-Emitter Sustaining Voltage
CEO
I
Collector Cut-off Current
CEO
I
Collector Cut-off Current
CBO
I
Emitter Cut-off Current
EBO
h
* DC Current Gain
FE
V
(sat)
* Collector-Emitter Saturation Voltage
CE
V
(sat)
* Base-Emitter Saturation Voltage
BE
V
(on)
* Base-Emitter On Voltage
BE
f
Current Gain Bandwidth Product
T
C
Output Capacitance
ob
* Pulse Test: PW 300 s, Duty Cycle 2%
©2002 Fairchild Semiconductor Corporation
KSH112
1
T
=25 C unless otherwise noted
C
Value
Units
100
V
100
V
5
V
2
A
4
A
50
mA
=25 C)
20
W
C
=25 C)
1.75
W
a
150
C
- 65 ~ 150
C
T
=25 C unless otherwise noted
C
Test Condition
I
= 30mA, I
C
V
= 50V, I
CE
V
= 100V, I
CB
V
= 5V, I
EB
C
V
= 3V, I
CE
C
V
= 3V, I
CE
C
V
= 3V, I
CE
C
I
= 2A, I
= 8mA
C
B
I
= 4A, I
= 40mA
C
B
I
= 4A, I
= 40mA
C
B
V
= 3A, I
CE
C
V
= 10V, I
CE
V
= 10V, I
CB
f = 0.1MHz
D-PAK
I-PAK
1
1.Base
2.Collector
3.Emitter
Equivalent Circuit
C
B
R1
R2
R 1 10 k
E
R 2 0.6 k
Min.
Max.
Units
= 0
100
V
B
= 0
20
A
B
= 0
20
A
B
= 0
2
mA
= 0.5A
500
= 2A
1000
12K
= 4A
200
2
V
3
V
4
V
= 2A
2.8
V
= 0.75A
25
MHz
C
= 0
100
pF
E
Rev. A4, October 2002

KSH112-I Summary of contents

  • Page 1

    ... Collector-Emitter Saturation Voltage CE V (sat) * Base-Emitter Saturation Voltage BE V (on) * Base-Emitter On Voltage BE f Current Gain Bandwidth Product T C Output Capacitance ob * Pulse Test: PW 300 s, Duty Cycle 2% ©2002 Fairchild Semiconductor Corporation KSH112 1 T =25 C unless otherwise noted C Value Units 100 V 100 ...

  • Page 2

    ... Figure 1. DC current Gain 1000 100 [V], COLLECTOR-BASE VOLTAGE CB Figure 3. Collector Output Capacitance 10 t STG 0.1 0.01 0.1 I [A], COLLECTOR CURRENT C Figure 5. Turn Off Time ©2002 Fairchild Semiconductor Corporation 0.1 0. 0.01 Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 10 1 0.1 10 100 0. =30V CC I ...

  • Page 3

    ... Typical Characteristics 100 C], CASE TEMPERATURE C Figure 7. Power Derating ©2002 Fairchild Semiconductor Corporation (Continued) 125 150 175 Rev. A4, October 2002 ...

  • Page 4

    ... Package Dimensions (0.50) MAX0.96 2.30TYP [2.30 0.20] ©2002 Fairchild Semiconductor Corporation D-PAK 6.60 0.20 5.34 0.30 (4.34) (0.50) 0.76 0.10 2.30TYP [2.30 0.20] 6.60 (2XR0.25) 2.30 0.10 0.50 0.10 0.50 0.10 1.02 0.20 2.30 0.20 0.20 (5.34) (5.04) (1.50) 0.76 0.10 Dimensions in Millimeters Rev. A4, October 2002 ...

  • Page 5

    ... Package Dimensions (0.50) MAX0.96 0.76 0.10 2.30TYP [2.30 0.20] ©2002 Fairchild Semiconductor Corporation (Continued) I-PAK 6.60 0.20 5.34 0.20 (4.34) (0.50) 2.30TYP [2.30 0.20] 2.30 0.20 0.50 0.10 0.50 0.10 Dimensions in Millimeters Rev. A4, October 2002 ...

  • Page 6

    ... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ ...