CM6126 ON Semiconductor, CM6126 Datasheet

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CM6126

Manufacturer Part Number
CM6126
Description
Single-channel Transient Voltage Suppressor
Manufacturer
ON Semiconductor
Datasheet
CM6126
Single-Channel Transient
Voltage Suppressor
Product Description
(ASIPt) component in a 2 x 2, 4−bump, 0.5 mm pitch, CSP form
factor. This device is designed for:
Features
© Semiconductor Components Industries, LLC, 2011
April, 2011 − Rev. 3
Orientation
Table 1. PIN DESCRIPTIONS
The CM6126 is an Application Specific Integrated Passivet
Transient Voltage Suppression
Electrostatic Discharge Protection
Electrical Overstress Protection
4−Bump, 0.96 mm X 0.96 mm Footprint Chip Scale Package (CSP)
These Devices are Pb−Free and are RoHS Compliant
Marking
A1 and A2
B1 and B2
Pin
A
B
(Bumps Down View)
+
PACKAGE / PINOUT DIAGRAMS
1
Top View
UX
TVS Channel
Device Ground
4−Bump CSP Package
4−bump CSP Package
2
X = Single Digit Date Code
A
B
(Bumps Up View)
Description
Bottom View
A2
B2
2
A1
B1
1
A1
Orientation
Marking
1
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
CM6126
Device
ORDERING INFORMATION
ELECTRICAL SCHEMATIC
U
X
MARKING DIAGRAM
http://onsemi.com
(Pb−Free)
Package
WLCSP4
CASE 567AW
= CM6126
= Single Digit Date Code
A1 and A2
B1 and B2
WLCSP4
UX
Publication Order Number:
5000/Tape & Reel
Shipping
CM6126/D

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CM6126 Summary of contents

Page 1

... CM6126 Single-Channel Transient Voltage Suppressor Product Description The CM6126 is an Application Specific Integrated Passivet (ASIPt) component 4−bump, 0.5 mm pitch, CSP form factor. This device is designed for: • Transient Voltage Suppression • Electrostatic Discharge Protection • Electrical Overstress Protection Features • ...

Page 2

... I value using 10/1000 ms pulse). See Notes 1 and The device must not burn to open−circuit, when the value is below maximum I 2. This parameter is characterized using an ON Semiconductor−specific test board. Table 4. ELECTRICAL OPERATING CHARACTERISTICS Symbol Parameter I Stand−off quiescent current ...

Page 3

T = 255C, DC bias = Environment −10 dB −20 dB −30 dB −40 dB − Table 5. VERTICAL STRUCTURE DIMENSIONS Ref. Parameter Material a Die Thickness Silicon b ...

Page 4

... CONTROLLING DIMENSION: MILLIMETERS. 3. COPLANARITY APPLIES TO SPHERICAL CROWNS OF SOLDER BALLS. MILLIMETERS DIM MIN MAX A 0.56 0.72 A1 0.21 0.27 A2 0.42 REF b 0.29 0.35 D 0.96 BSC E 0.96 BSC e 0.50 BSC RECOMMENDED A1 PACKAGE OUTLINE 4X 0.25 0.50 DIMENSIONS: MILLIMETERS ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative CM6126/D ...

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