PDTC115E Philips Semiconductors, PDTC115E Datasheet - Page 2

• Manufacturer Part Number: PDTC115E
• Description: NPN resistor-equipped transistors; R1 = 100 kW/ R2 = 100 kW
• Manufacturer: Philips Semiconductors

Philips Semiconductors
FEATURES
APPLICATIONS
PRODUCT OVERVIEW
Note
1. * = p: Made in Hong Kong.
2004 Aug 06
PDTC115EE
PDTC115EEF
PDTC115EK
PDTC115EM
PDTC115ES
PDTC115ET
PDTC115EU
Built-in bias resistors
Simplified circuit design
Reduction of component count
Reduced pick and place costs.
General purpose switching and amplification
Inverter and interface circuits
Circuit driver.
NPN resistor-equipped transistors;
R1 = 100 k , R2 = 100 k
TYPE NUMBER
* = t: Made in Malaysia.
* = W: Made in China.
SOT54 (TO-92)
PHILIPS
SOT416
SOT490
SOT346
SOT883
SOT323
SOT23
PACKAGE
SC-101
SC-75
SC-89
SC-59
SC-43
SC-70
EIAJ
2
QUICK REFERENCE DATA
DESCRIPTION
NPN resistor equipped transistor (see “Simplified outline,
symbol and pinning” for package details).
V
I
R1
R2
SYMBOL
O
CEO
collector-emitter
voltage
output current (DC)
bias resistor
bias resistor
MARKING CODE
PARAMETER
TC115E
*44
*15
DV
46
49
56
(1)
(1)
PDTC115E series
Product specification
100
100
PDTA115EE
PDTA115EEF
PDTA115EK
PDTA115EM
PDTA115ES
PDTA115ET
PDTA115EU
PNP COMPLEMENT
TYP.
50
20
MAX.
V
mA
k
k
UNIT