PDTC115E Philips Semiconductors, PDTC115E Datasheet - Page 4

• Manufacturer Part Number: PDTC115E
• Description: NPN resistor-equipped transistors; R1 = 100 kW/ R2 = 100 kW
• Manufacturer: Philips Semiconductors

Philips Semiconductors
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Refer to standard mounting conditions.
2. Reflow soldering is the only recommended soldering method.
3. Refer to SOT883 standard mounting conditions; FR4 with 60 m copper strip line.
2004 Aug 06
PDTC115EE
PDTC115EEF
PDTC115EK
PDTC115EM
PDTC115ES
PDTC115ET
PDTC115EU
V
V
V
V
I
I
P
T
T
T
O
CM
SYMBOL
stg
j
amb
CBO
CEO
EBO
I
tot
NPN resistor-equipped transistors;
R1 = 100 k , R2 = 100 k
TYPE NUMBER
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
output current (DC)
peak collector current
total power dissipation
storage temperature
junction temperature
operating ambient
temperature
positive
negative
SOT54
SOT23
SOT346
SOT323
SOT416
SOT883
SOT490
PARAMETER
NAME
plastic surface mounted package; 3 leads
plastic surface mounted package; 3 leads
plastic surface mounted package; 3 leads
leadless ultra small plastic package; 3 solder lands; body
1.0
plastic single-ended leaded (through hole) package; 3 leads
plastic surface mounted package; 3 leads
plastic surface mounted package; 3 leads
0.6
open emitter
open base
open collector
T
note 1
note 1
note 1
note 1
note 1
notes 2 and 3
notes 1 and 2
amb
0.5 mm
25 C
CONDITIONS
4
DESCRIPTION
PACKAGE
65
65
MIN.
PDTC115E series
50
50
10
+40
20
100
500
250
250
200
150
250
250
+150
150
+150
10
MAX.
Product specification
V
V
V
V
V
mA
mA
mW
mW
mW
mW
mW
mW
mW
VERSION
C
C
C
SOT416
SOT490
SOT346
SOT883
SOT323
SOT54
SOT23
UNIT