PDTC123JEF Philips Semiconductors, PDTC123JEF Datasheet
PDTC123JEF
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PDTC123JEF Summary of contents
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... DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTC123JEF NPN resistor-equipped transistor Preliminary specification 1999 May 27 ...
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... MGA893 - 1 Fig.2 Equivalent inverter symbol. CONDITIONS open emitter open base open collector note 1 amb 2 Preliminary specification PDTC123JEF MARKING TYPE MARKING NUMBER CODE PDTC123JEF 28 MIN. MAX. UNIT + 100 mA 100 mA 250 mW 65 +150 C 150 ...
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... 100 mA 0 MHz Preliminary specification PDTC123JEF VALUE UNIT 500 K/W MIN. TYP. MAX. UNIT 100 180 A 100 100 mV 0.6 0.5 V 1.1 0.75 V 1.54 2.2 2. ...
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... C B (1) T (2) T (3) T Fig.4 MDA930 handbook, halfpage V i(on) ( (mA (1) T (2) T (3) T Fig.6 4 Preliminary specification PDTC123JEF (1) (2) ( 20. = 100 C. amb = 25 C. amb = 40 C. amb Collector-emitter saturation voltage as a function of collector current; typical values. ...
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... UNIT 0.8 0.33 0.2 1.7 mm 0.6 0.23 0.1 1.5 OUTLINE VERSION IEC SOT490 1999 May scale 0.95 1.7 0.5 1.0 0.5 0.75 1.5 0.3 REFERENCES JEDEC EIAJ SC-89 5 Preliminary specification PDTC123JEF detail 0.1 0.1 EUROPEAN PROJECTION SOT490 ISSUE DATE 98-10-23 ...
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... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1999 May 27 6 Preliminary specification PDTC123JEF ...
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... Philips Semiconductors NPN resistor-equipped transistor 1999 May 27 NOTES 7 Preliminary specification PDTC123JEF ...
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... Tel. +46 8 5985 2000, Fax. +46 8 5985 2745 Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH, Tel. +41 1 488 2741 Fax. +41 1 488 3263 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2886, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel ...