PDTC143EK Philips Semiconductors, PDTC143EK Datasheet - Page 3
PDTC143EK
Manufacturer Part Number
PDTC143EK
Description
NPN resistor-equipped transistor
Manufacturer
Philips Semiconductors
Datasheet
1.PDTC143EK.pdf
(8 pages)
Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
1998 May 18
V
V
V
V
I
I
P
T
T
T
R
I
I
I
h
V
V
V
R1
R2
------- -
R1
C
SYMBOL
SYMBOL
SYMBOL
O
CM
amb
CBO
CEO
EBO
FE
stg
j
amb
CBO
CEO
EBO
I
tot
CEsat
i(off)
i(on)
th j-a
c
NPN resistor-equipped transistor
= 25 C unless otherwise specified.
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
output current (DC)
peak collector current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
thermal resistance from junction to ambient
collector cut-off current
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation voltage
input-off voltage
input-on voltage
input resistor
resistor ratio
collector capacitance
positive
negative
PARAMETER
PARAMETER
PARAMETER
I
I
I
I
I
I
I
I
I
E
B
B
C
C
C
C
C
E
open emitter
open base
open collector
T
= 0; V
= 0; V
= 0; V
= 0; V
= 10 mA; I
= 100 A; V
= 20 mA; V
= i
= 10 mA; V
amb
e
= 0; V
CB
CE
CE
note 1
EB
3
25 C; note 1
CONDITIONS
CONDITIONS
= 50 V
= 5 V
= 30 V
= 30 V; T
CB
B
CE
CE
CONDITIONS
CE
= 0.5 mA
= 10 V; f = 1 MHz
= 0.3 V
= 5 V
= 5 V
j
= 150 C
30
2.5
3.3
0.8
MIN.
65
65
MIN.
VALUE
500
1.1
1.9
4.7
1
TYP.
PDTC143EK
50
50
10
+30
100
100
250
+150
150
+150
Product specification
10
MAX.
100
1
50
0.9
150
0.5
6.1
1.2
2.5
MAX.
UNIT
K/W
V
V
V
V
V
mA
mA
mW
C
C
C
UNIT
nA
mA
mV
V
V
k
pF
UNIT
A
A