MT28F400B3 Micron Technology, MT28F400B3 Datasheet

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MT28F400B3

Manufacturer Part Number
MT28F400B3
Description
(MT28F004B3 / MT28F400B3) FLASH MEMORY
Manufacturer
Micron Technology
Datasheets

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FLASH MEMORY
Features
• Seven erase blocks:
• Smart 3 technology (B3):
• Compatible with 0.3µm Smart 3 device
• Advanced 0.18µm CMOS floating-gate process
• Address access time: 80ns
• 100,000 ERASE cycles
• Industry-standard pinouts
• Inputs and outputs are fully TTL-compatible
• Automated write and erase algorithm
• Two-cycle WRITE/ERASE sequence
• Byte- or word-wide READ and WRITE
• Byte-wide READ and WRITE only
NOTE:
09005aef8114a789
F45.fm - Rev. E 6/04 EN
Options
• Timing
• 80ns access
• Configurations
• 1 Meg x 8
• 512K x 16/1 Meg x 8
• Boot Block Starting Word Address
• Top (3FFFFh)
• Bottom (00000h)
• Operating Temperature Range
• Extended (-40ºC to +85ºC)
• Packages
TSOP and SOP packaging options
MT28F004B3
Plastic 40-pin (standard) TSOP Type I
Plastic 40-pin (lead free) TSOP Type
MT28F400B3
Plastic 48-pin (standard) TSOP Type I
Plastic 48-pin (lead free) TSOP Type I
Plastic 44-pin (standard) SOP
Plastic 44-pin (lead free) SOP
16KB/8K-word boot block (protected)
Two 8KB/4K-word parameter blocks
Four main memory blocks
3.3V ±0.3V V
3.3V ±0.3V
5V ±10%
(MT28F400B3, 256K x 16/512K x 8)
(MT28F004B3, 512K x 8)
1. This generation of devices does not support 12V
2. Contact Factory for availability
V
application production programming can be
used with no loss of performance.
PP
V
PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE.
production programming; however, 5V
PP
V
CC
PP
application/production programming
application programming
I
Marking
MT28F004B3
MT28F400B3
WG
SG
WP
SP
VG
ET
VP
-8
T
B
2
2
SMART 3 BOOT BLOCK FLASH MEMORY
V
1
PP
1
GENERAL DESCRIPTION
programmable memory devices containing 4,194,304
bits organized as 262,144 words (16 bits) or 524,288
bytes (8 bits). Writing or erasing the device is done with
either a 3.3V or 5V V
performed with a 3.3V V
advances, 5V V
duction programming. These devices are fabricated
with Micron’s advanced 0.18µm CMOS floating-gate
process.
into seven separately erasable blocks. To ensure that
critical firmware is protected from accidental erasure
or overwrite, the devices feature a hardware-protected
boot block. Writing or erasing the boot block requires
either applying a super-voltage to the RP# pin or driv-
ing WP# HIGH in addition to executing the normal
write or erase sequences. This block may be used to
store code implemented in low-level system recovery.
The remaining blocks vary in density and are written
and erased with no additional security measures.
for the latest data sheet.
MT28F004B3
MT28F400B3
3V ONLY, DUAL SUPPLY (SMART 3)
The MT28F004B3 (x8) and MT28F400B3 (x16/x8)
are nonvolatile, electrically block-erasable (flash),
The MT28F004B3 and MT28F400B3 are organized
Refer to Micron’s Web site (www.micron.com/flash)
40-Pin TSOP Type I
MT28F400B3SG-8 T
PP
Part Number Example:
is optimal for application and pro-
PP
44-Pin SOP
voltage, while all operations are
CC
. Due to process technology
©2003 Micron Technology, Inc. All rights reserved.
48-Pin TSOP Type I
4Mb

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