MT29F8G08FACWP

Manufacturer Part NumberMT29F8G08FACWP
DescriptionNAND Flash Memory
ManufacturerMicron Technology
MT29F8G08FACWP datasheet
 
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NAND Flash Memory
MT29F2G08AACWP, MT29F4G08BACWP, MT29F8G08FACWP
For the latest data sheet, please refer to the Micron Web site:
Features
• Organization
• Page size x8: 2,112 bytes (2,048 + 64 bytes)
• Page size x16: 1,056 words (1,024 + 32 words)
• Block size: 64 pages (128K + 4K bytes)
• Device size: 2Gb: 2,048 blocks; 4Gb: 4,096 blocks;
8Gb: 8,192 blocks
• READ performance
• RANDOM READ: 25µs
• SEQUENTIAL READ: 30ns (3V x8 only)
• WRITE performance
• PROGRAM PAGE: 300µs (TYP)
• BLOCK ERASE: 2ms (TYP)
• Endurance: 100,000 PROGRAM/ERASE cycles
• First block (block address 00h) guaranteed to be
valid without ECC (up to 1,000 PROGRAM/ERASE
cycles)
1
• V
: 1.70V–1.95V
or 2.7V–3.6V
CC
• Automated PROGRAM and ERASE
• Basic NAND Flash command set:
• PAGE READ, READ for INTERNAL DATA MOVE,
RANDOM DATA READ, READ ID, READ STATUS,
PROGRAM PAGE, RANDOM DATA INPUT, PRO-
GRAM PAGE CACHE MODE, PROGRAM for
INTERNAL DATA MOVE, BLOCK ERASE, RESET
www.DataSheet4U.net
• New commands:
• PAGE READ CACHE MODE
• One-time programmable (OTP), including:
OTP DATA PROGRAM, OTP DATA PROTECT,
OTP DATA READ
• READ UNIQUE ID (contact factory)
• READ ID2 (contact factory)
• Operation status byte provides a software method of
detecting:
• PROGRAM/ERASE operation completion
• PROGRAM/ERASE pass/fail condition
• Write-protect status
• READY/BUSY (R/B#) pin provides a hardware
method of detecting PROGRAM or ERASE cycle
completion
• PRE pin: prefetch on power up (3V device only)
• WP# pin: hardware write protect
PDF: 09005aef814b01a2 / Source: 09005aef814b01c7
2_4_8gb_nand_m49a__1.fm - Rev. A 3/06 EN
Products and specifications discussed herein are subject to change by Micron without notice.
2Gb, 4GB, 8Gb: x8, x16 NAND Flash Memory
www.micron.com/datasheets
Figure 1:
48-Pin TSOP Type 1
Options
• Density:
2Gb (single die)
4Gb (dual-die stack)
8Gb (quad-die stack)
• Device width:
x8
1
x16
• Configuration:
# of die # of CE# # of R/B#
1
1
2
1
4
2
• V
:
CC
2.7V–3.6V
1
1.70V–1.95V
• Third generation die
• Package:
48-Pin TSOP type I (lead-free)
• Operating temperature:
Commercial (0°C to 70°C)
Extended (–40°C to +85°C)
Notes: 1. Packaged parts are only available for 3V x8
devices. For 1.8V or x16 devices, contact
factory.
2. The PRE function is not supported on ET and
2
1.8V devices. Contact factory.
3. For ET devices, contact factory.
Micron Technology, Inc., reserves the right to change products or specifications without notice.
1
Features
Marking
MT29F2G
MT29F4G
MT29F8G
MT29Fxx08x
MT29Fxx16x
1
A
1
B
2
F
A
B
C
WP
None
3
ET
©2005 Micron Technology, Inc. All rights reserved.

MT29F8G08FACWP Summary of contents

  • Page 1

    ... NAND Flash Memory MT29F2G08AACWP, MT29F4G08BACWP, MT29F8G08FACWP For the latest data sheet, please refer to the Micron Web site: Features • Organization • Page size x8: 2,112 bytes (2,048 + 64 bytes) • Page size x16: 1,056 words (1,024 + 32 words) • Block size: 64 pages (128K + 4K bytes) • ...

  • Page 2

    ... Rev. A 3/06 EN 2Gb, 4GB, 8Gb: x8, x16 NAND Flash Memory ® NAND Flash devices are available in several different configurations and Micron Technology, Inc., reserves the right to change products or specifications without notice. 2 Part Numbering Information ES :C Die Revision C = First generation Production Status ...

  • Page 3

    ... Power Cycling . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .41 CC Timing Diagrams .46 Package Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .59 PDF: 09005aef814b01a2 / Source: 09005aef814b01c7 2_4_8gb_nand_m49aTOC.fm - Rev. A 3/06 EN 2Gb, 4GB, 8Gb: x8, x16 NAND Flash Memory Micron Technology, Inc., reserves the right to change products or specifications without notice. 3 ©2005 Micron Technology, Inc. All rights reserved. Table of Contents ...

  • Page 4

    ... PROGRAM PAGE CACHE MODE Ending on 15h . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .57 Figure 56: BLOCK ERASE Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .58 PDF: 09005aef814b01a2 / Source: 09005aef814b01c7 2_4_8gb_nand_m49aLOF.fm - Rev. A 3/06 EN 2Gb, 4GB, 8Gb: x8, x16 NAND Flash Memory Micron Technology, Inc., reserves the right to change products or specifications without notice. 4 ©2005 Micron Technology, Inc. All rights reserved. List of Figures ...

  • Page 5

    ... RESET Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .58 Figure 58: TSOP Type .59 www.DataSheet4U.net PDF: 09005aef814b01a2 / Source: 09005aef814b01c7 2_4_8gb_nand_m49aLOF.fm - Rev. A 3/06 EN 2Gb, 4GB, 8Gb: x8, x16 NAND Flash Memory Micron Technology, Inc., reserves the right to change products or specifications without notice. 5 ©2005 Micron Technology, Inc. All rights reserved. List of Figures ...

  • Page 6

    ... AC Characteristics: Normal Operation .45 Table 22: PROGRAM/ERASE Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .45 www.DataSheet4U.net PDF: 09005aef814b01a2 / Source: 09005aef814b01c7 2_4_8gb_nand_m49aLOT.fm - Rev. A 3/06 EN 2Gb, 4GB, 8Gb: x8, x16 NAND Flash Memory Micron Technology, Inc., reserves the right to change products or specifications without notice. 6 ©2005 Micron Technology, Inc. All rights reserved. List of Tables ...

  • Page 7

    ... PDF: 09005aef814b01a2 / Source: 09005aef814b01c7 2_4_8gb_nand_m49a__2.fm - Rev. A 3/06 EN 2Gb, 4GB, 8Gb: x8, x16 NAND Flash Memory I/O Address Register Control Status Register Command Register Control Logic Micron Technology, Inc., reserves the right to change products or specifications without notice. 7 General Description Column Decode Data Register Cache Register ...

  • Page 8

    ... General Description Micron Technology, Inc., reserves the right to change products or specifications without notice. 8 ©2005 Micron Technology, Inc. All rights reserved. x8 x16 I/O15 NC I/O7 NC I/O14 I/O7 I/O6 I/O6 I/O13 I/O5 I/O5 I/O4 I/O12 NC I/O4 NC ...

  • Page 9

    ... Ground connection connect: NC pins are not internally connected. These pins can be driven or left unconnected. Do not use: These pins must be left unconnected. Micron Technology, Inc., reserves the right to change products or specifications without notice. 9 General Description ©2005 Micron Technology, Inc. All rights reserved. ...

  • Page 10

    ... Figures 5 and 6 on pages 11 and 12 for additional memory mapping and addressing details. www.DataSheet4U.net PDF: 09005aef814b01a2 / Source: 09005aef814b01c7 2_4_8gb_nand_m49a__2.fm - Rev. A 3/06 EN 2Gb, 4GB, 8Gb: x8, x16 NAND Flash Memory Micron Technology, Inc., reserves the right to change products or specifications without notice. 10 Architecture ©2005 Micron Technology, Inc. All rights reserved. ...

  • Page 11

    ... Memory Mapping 2,047 2,047 • • • Spare area Out of Bounds Addresses in Page 0x0000000840–0x0000000FFF 0x0000010840–0x0000010FFF 0x0000020840–0x0000020FFF 0x01FFFE0840–0x01FFFE0FFF 0x01FFFF0840–0x01FFFF0FFF Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2005 Micron Technology, Inc. All rights reserved. 2,111 ...

  • Page 12

    ... Memory Mapping 2,047 1,023 • • • Spare area Out of Bounds Addresses in Page 0x0000000420–0x0000000FFF 0x0000010420–0x0000010FFF 0x0000020420–0x0000020FFF 0x01FFFE0420–0x01FFFE0FFF 0x01FFFF0420–0x01FFFF0FFF Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2005 Micron Technology, Inc. All rights reserved. 1,055 ...

  • Page 13

    ... CA3 LOW LOW CA11 PA5 PA4 PA3 BA13 BA12 BA11 LOW LOW LOW Micron Technology, Inc., reserves the right to change products or specifications without notice. 13 Memory Mapping I/O 0 I/O 7 (128K + 4K) bytes = (2K + 64) bytes = (2K + 64) bytes x 64 pages = (128K + 4K) bytes x 2,048 blocks = 2,112Mb I/O2 I/O1 CA2 ...

  • Page 14

    ... CA5 CA4 LOW LOW LOW BA6 PA5 PA4 BA14 BA13 BA12 LOW LOW LOW Micron Technology, Inc., reserves the right to change products or specifications without notice. 14 Memory Mapping I/O 0 I/O 15 (64K + 2K) words = (1K + 32) words = (1K + 32) words x 64 pages = (64K + 2K) words x 2,048 blocks = 2,112Mb I/O3 I/O2 I/O1 ...

  • Page 15

    ... CA3 LOW LOW CA11 PA5 PA4 PA3 BA13 BA12 BA11 LOW LOW LOW Micron Technology, Inc., reserves the right to change products or specifications without notice. 15 Memory Mapping I/O 0 I/O 7 (128K + 4K) bytes = (2K + 64) bytes = (2K + 64) bytes x 64 pages = (128K + 4K) bytes x 4,096 blocks = 4,224Mb I/O2 I/O1 CA2 ...

  • Page 16

    ... CA5 CA4 LOW LOW LOW BA6 PA5 PA4 BA14 BA13 BA12 LOW LOW LOW Micron Technology, Inc., reserves the right to change products or specifications without notice. 16 Memory Mapping I/O 0 I/O 15 (64K + 2K) words = (1K + 32) words = (1K + 32) words x 64 pages = (64K + 2K) words x 4,096 blocks = 4,224Mb I/O3 I/O2 I/O1 ...

  • Page 17

    ... Table 9 on page 22.) PDF: 09005aef814b01a2 / Source: 09005aef814b01c7 2_4_8gb_nand_m49a__2.fm - Rev. A 3/06 EN 2Gb, 4GB, 8Gb: x8, x16 NAND Flash Memory Micron Technology, Inc., reserves the right to change products or specifications without notice. 17 Bus Operation ©2005 Micron Technology, Inc. All rights reserved. ...

  • Page 18

    ... V PDF: 09005aef814b01a2 / Source: 09005aef814b01c7 2_4_8gb_nand_m49a__2.fm - Rev. A 3/06 EN 2Gb, 4GB, 8Gb: x8, x16 NAND Flash Memory t R and transitions HIGH after the . CC Micron Technology, Inc., reserves the right to change products or specifications without notice. 18 Bus Operation ©2005 Micron Technology, Inc. All rights reserved. ...

  • Page 19

    ... Fall Rise - Rise calculated at 10 percent and 90 percent points. t Fall ≈ 7ns at 1.8V. Micron Technology, Inc., reserves the right to change products or specifications without notice. 19 Bus Operation 1.85V 3mA + ΣI L 3.2V 8mA + Σ Vcc 3.3 Vcc 1.8 ©2005 Micron Technology, Inc. All rights reserved. ...

  • Page 20

    ... Address input Data input Sequential read and data output During read (busy) During program (busy) During erase (busy) Write protect Standby Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2005 Micron Technology, Inc. All rights reserved. ...

  • Page 21

    ... RPRE) while the first page of data is copied into the data register. t RPRE values. Once the READ is complete and R/B# goes at power-on, and must not be toggled during CC ≈ 2. RPRE Micron Technology, Inc., reserves the right to change products or specifications without notice. 21 Bus Operation 1st 2nd 3rd ..... ...

  • Page 22

    ... Yes 85h 5 Optional 85h 2 Yes 60h 3 No FFh – No A0h 5 Yes A5h 5 No AFh 5 No Micron Technology, Inc., reserves the right to change products or specifications without notice. 22 Command Definitions Valid Command During 1 Cycle 2 Busy Notes 30h No – No – No 35h No E0h No – No – ...

  • Page 23

    ... RC rate (see Figure 17). t CLR OUT OUT 30h Busy Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2005 Micron Technology, Inc. All rights reserved. t RHZ D OUT M Don’t Care ...

  • Page 24

    ... Command Definitions Address 05h E0h (2 Cycles during the time it takes then the PAGE READ is hidden. t DCBSYR2. This time can vary, Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2005 Micron Technology, Inc. All rights reserved. Data Output ...

  • Page 25

    Figure 19: PAGE READ CACHE MODE CLE CE# WE# ALE t R R/B# RE# I/Ox 00h Address (5 Cycles) 30h t DCBSYR1 t DCBSYR2 31h 31h Data Output (Serial Access) t DCBSYR2 Data Output 3Fh Data Output (Serial Access) (Serial ...

  • Page 26

    ... PDF: 09005aef814b01a2 / Source: 09005aef814b01c7 2_4_8gb_nand_m49a__2.fm - Rev. A 3/06 EN 2Gb, 4GB, 8Gb: x8, x16 NAND Flash Memory WHR t REA 00h Byte 0 Byte 1 26 Command Definitions Byte 2 Byte 3 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2005 Micron Technology, Inc. All rights reserved. ...

  • Page 27

    ... Micron Technology, Inc., reserves the right to change products or specifications without notice. 27 Command Definitions 1 I/O2 I/O1 I/O0 Value Notes 2Ch DAh AAh CAh BAh ...

  • Page 28

    ... Ready/busy 2 cache Write protect Write protect – – t CLR t REA 70h Micron Technology, Inc., reserves the right to change products or specifications without notice. 28 Command Definitions t R (transfer from NAND Flash Block Erase Definition Pass/fail “0” = Successful PROGRAM/ERASE “1” = Error in PROGRAM/ERASE – ...

  • Page 29

    ... IN Address (2 Cycles) D 85h Command Definitions t PROG. The READ STATUS 70h Status I PROGRAM successful I PROGRAM error t PROG Status 10h 70h Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2005 Micron Technology, Inc. All rights reserved. ...

  • Page 30

    ... Output Data Input B: With status reads 30 Command Definitions t CBSY Address/ 15h 80h Data Input t 1 LPROG 2 Status 70h Output Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2005 Micron Technology, Inc. All rights reserved LPROG 10h ...

  • Page 31

    ... PDF: 09005aef814b01a2 / Source: 09005aef814b01c7 2_4_8gb_nand_m49a__2.fm - Rev. A 3/06 EN 2Gb, 4GB, 8Gb: x8, x16 NAND Flash Memory Command Definitions Micron Technology, Inc., reserves the right to change products or specifications without notice. 31 ©2005 Micron Technology, Inc. All rights reserved. ...

  • Page 32

    ... Cycles Address 85h Data 85h (5 Cycles) Unlimited number of repetitions. 32 Command Definitions t PROG 10h 70h Status t PROG Address Data 10h 70h (2 Cycles) Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2005 Micron Technology, Inc. All rights reserved. Status ...

  • Page 33

    ... I/Ox Address Input (3 Cycles) PDF: 09005aef814b01a2 / Source: 09005aef814b01c7 2_4_8gb_nand_m49a__2.fm - Rev. A 3/06 EN 2Gb, 4GB, 8Gb: x8, x16 NAND Flash Memory t BERS D0h Micron Technology, Inc., reserves the right to change products or specifications without notice. 33 Command Definitions t BERS 70h Status I ERASE successful I ERASE error Don’ ...

  • Page 34

    ... It is possible to program each OTP page a maximum of four times. PDF: 09005aef814b01a2 / Source: 09005aef814b01c7 2_4_8gb_nand_m49a__2.fm - Rev. A 3/06 EN 2Gb, 4GB, 8Gb: x8, x16 NAND Flash Memory Command Definitions Micron Technology, Inc., reserves the right to change products or specifications without notice PROG). The READ ©2005 Micron Technology, Inc. All rights reserved. ...

  • Page 35

    ... Page bytes Serial Input x8 device 2,112 bytes x16 device 1,056 words Micron Technology, Inc., reserves the right to change products or specifications without notice. 35 Command Definitions PROG 10h 70h PROGRAM READ STATUS Command Command OTP data written (following " ...

  • Page 36

    ... PROGRAM Command 36 Command Definitions t PROG. The READ STATUS (70h PROG 70h READ STATUS Command OTP data protected 1 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2005 Micron Technology, Inc. All rights reserved. Status Don’t Care ...

  • Page 37

    ... R) while the data is moved from the OTP page to the data register. The Col OTP 00h 00h 1 Page 37 Command Definitions OUT OUT 30h Busy Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2005 Micron Technology, Inc. All rights reserved. D OUT M Don’t Care ...

  • Page 38

    ... WB t RST Bit 7 Bit 6 Bit Command Definitions Bit 4 Bit 3 Bit 2 Bit Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2005 Micron Technology, Inc. All rights reserved. Bit 0 Hex 0 E0h 0 60h ...

  • Page 39

    ... NAND Flash Memory t WW 60h D0h t WW 60h D0h t WW 80h 10h Micron Technology, Inc., reserves the right to change products or specifications without notice. 39 Command Definitions t WW) required from WP# toggling until a ©2005 Micron Technology, Inc. All rights reserved. ...

  • Page 40

    ... Rev. A 3/06 EN 2Gb, 4GB, 8Gb: x8, x16 NAND Flash Memory t WW 80h 10h during the endurance life of the product. VB Micron Technology, Inc., reserves the right to change products or specifications without notice. 40 Error Management ) valid blocks VB ©2005 Micron Technology, Inc. All rights reserved. ...

  • Page 41

    ... CC during power cycling. When IL 3V device: ≈ 2.5V 1.8V device: ≈ 1.5V Don’t Care Undefined Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2005 Micron Technology, Inc. All rights reserved. Unit °C mA Unit ...

  • Page 42

    ... 0V OUT CC I/O[7:0], I/O[15:0] – –400µ 2.1mA 0. Micron Technology, Inc., reserves the right to change products or specifications without notice. 42 Electrical Characteristics Min Typ Max Icc1 – – – – ...

  • Page 43

    ... OL Min Max Unit 2,008 2,048 Blocks 4,016 4,096 8,032 8,192 during the endurance life of the VB Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2005 Micron Technology, Inc. All rights reserved. Max Unit µA 100 µ ...

  • Page 44

    ... Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2005 Micron Technology, Inc. All rights reserved. Notes Notes Unit Notes ...

  • Page 45

    ... WB, even if R/B# is ready. Typ Max – 8 Cycles 700 – – 300 700 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2005 Micron Technology, Inc. All rights reserved. Unit Notes µs µ µs ...

  • Page 46

    ... ALS t ALH Col Col Row Add 1 Add 2 Add 1 Micron Technology, Inc., reserves the right to change products or specifications without notice. 46 Timing Diagrams Don’t Care Row Row Add 2 Add 3 Don’t Care Undefined ©2005 Micron Technology, Inc. All rights reserved. ...

  • Page 47

    ... RC 47 Timing Diagrams t CLH Final IN t CHZ t REA RHZ OUT Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2005 Micron Technology, Inc. All rights reserved. Don’t Care Don’t Care ...

  • Page 48

    ... Status Output t CLR OUT OUT 30h Busy Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2005 Micron Technology, Inc. All rights reserved. Don’t Care t RHZ D OUT M Don’t Care ...

  • Page 49

    ... Don’t Care t CLR t WHR D Col Col OUT 05h E0h Add 1 Add Column Address M Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2005 Micron Technology, Inc. All rights reserved. t REA D D OUT OUT Don’t Care ...

  • Page 50

    Figure 45: PAGE READ CACHE MODE Timing Diagram, Part CLE t CLS t CLH CE WE# ALE RE Col Col Row Row I/Ox 00h Add 1 Add ...

  • Page 51

    Figure 46: PAGE READ CACHE MODE Timing Diagram, Part CLE t CLS t CLH CE# WE# t CEA ALE REA D ...

  • Page 52

    Figure 47: PAGE READ CACHE MODE Timing without R/B#, Part CLE t t CLS CLH CE WE# ALE RE Col Col Row Row Row I/Ox 00h Add ...

  • Page 53

    Figure 48: PAGE READ CACHE MODE Timing without R/B#, Part CLE t CLS t CLH CE# WE# t CEA ALE REA D OUT D OUT ...

  • Page 54

    ... Timing Diagrams Byte 2 Byte PROG D IN 10h 70h M PROGRAM READ STATUS Command Command Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2005 Micron Technology, Inc. All rights reserved. Status Don’t Care ...

  • Page 55

    ... PROG Col 10h Add 2 N N+1 Serial Input PROGRAM Command Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2005 Micron Technology, Inc. All rights reserved. 10h Don’t Care 70h Status READ STATUS Command Don’t Care ...

  • Page 56

    ... IN IN 10h Add 2 Add 1 Add 2 Add PROGRAM Last Page Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2005 Micron Technology, Inc. All rights reserved. t WHR 70h Status READ STATUS Command Don’t Care t WHR 70h Status Don’t Care ...

  • Page 57

    Figure 55: PROGRAM PAGE CACHE MODE Ending on 15h CLE CE ADL WE# ALE RE# Row Row Row Col Col D IN I/Ox 80h Add 1 Add 2 Add 1 Add 2 Add 3 N SERIAL DATA ...

  • Page 58

    ... WB t BERS Row D0h Add 3 ERASE Command Busy RST 58 Timing Diagrams t WHR Status 70h READ STATUS Command I/ Pass I/ Fail Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2005 Micron Technology, Inc. All rights reserved. Don’t Care ...

  • Page 59

    ... S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900 prodmktg@micron.com www.micron.com Customer Comment Line: 800-932-4992 Micron, the M logo, and the Micron logo are trademarks of Micron Technology, Inc. All other trademarks are the property of their respective owners. PDF: 09005aef814b01a2 / Source: 09005aef814b01c7 2_4_8gb_nand_m49a__2.fm - Rev. A 3/06 EN 2Gb, 4GB, 8Gb: x8, x16 NAND Flash Memory 20.00 ± ...

  • Page 60

    ... Revision History Rev 3/06 • Initial release. www.DataSheet4U.net PDF: 09005aef814b01a2 / Source: 09005aef814b01c7 2_4_8gb_nand_m49a__2.fm - Rev. A 3/06 EN 2Gb, 4GB, 8Gb: x8, x16 NAND Flash Memory Micron Technology, Inc., reserves the right to change products or specifications without notice. 60 Revision History ©2005 Micron Technology, Inc. All rights reserved. ...