MT29F8G08FACWP Micron Technology, MT29F8G08FACWP Datasheet - Page 2

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MT29F8G08FACWP

Manufacturer Part Number
MT29F8G08FACWP
Description
NAND Flash Memory
Manufacturer
Micron Technology
Datasheet
Part Numbering Information
Figure 2:
Valid Part Number Combinations
PDF: 09005aef814b01a2 / Source: 09005aef814b01c7
2_4_8gb_nand_m49a__1.fm - Rev. A 3/06 EN
www.DataSheet4U.net
Micron Technology
Product Family
29F = Single-supply NAND Flash memory
Density
2G = 2Gb
4G = 4Gb
8G = 8Gb
Device Width
08 = 8 bits
16 = 16 bits
Classification
A
B
F
Operating Voltage Range
A = 3.3V (2.70V–3.60V)
B = 1.8V (1.70V–1.95V)
# of die # of CE# # of R/B#
1
2
4
Part Number Chart
1
1
1
1
1
1
Micron
densities (see Figure 2).
After building the part number from the part numbering chart above, verify that the part
number is valid using the Micron Parametric Part Search at:
partsearch.
If the device required is not on this list, contact the factory.
Common
Common
Common
MT 29F 2G 08
I/O
®
NAND Flash devices are available in several different configurations and
A
A
C
WP
2
2Gb, 4GB, 8Gb: x8, x16 NAND Flash Memory
Micron Technology, Inc., reserves the right to change products or specifications without notice.
ES
:C
Part Numbering Information
Die Revision
C = First generation
Production Status
Blank = Production
ES = Engineering sample
MS = Mechanical sample
QS = Qualification sample
Operating Temperature Range
Blank = Commercial (0°C to +70°C)
ET = Extended (–40°C to +85°C)
Reserved for Future Use
Feature Set
Blank = Standard features
Package Codes
WP = 48-pin TSOP I (lead-free)
Generation
A = First-generation die
B = Second-generation die
C = Third-generation die
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©2005 Micron Technology, Inc. All rights reserved.

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