MT29F8G08FACWP Micron Technology, MT29F8G08FACWP Datasheet - Page 23

• Manufacturer Part Number: MT29F8G08FACWP
• Description: NAND Flash Memory
• Manufacturer: Micron Technology

READ Operations
PAGE READ 00h-30h
Figure 17:
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2_4_8gb_nand_m49a__2.fm - Rev. A 3/06 EN
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WE#
R/B#
I/Ox
CE#
ALE
RE#
CLE
PAGE READ Operation
00h
t WC
Add 1
Col
On initial power up, the device defaults to read mode. To enter the read mode while in
operation, write the 00h command to the command register, then write five ADDRESS
cycles followed by the 30h command.
To determine the progress of the data transfer from the NAND Flash array to the data
register (
mand. If the READ STATUS command is used to monitor the data transfer, the user
must re-issue the READ (00h) command to receive data output from the data register.
See Figure 47 on page 52 and Figure 48 on page 53 for examples. After the READ com-
mand has been re-issued, pulsing the RE# line will result in outputting data, starting
from the initial column address.
A serial page read sequence outputs a complete page of data. After 30h is written, the
page data is transferred to the data register, and R/B# goes LOW during the transfer.
When the transfer to the data register is complete, R/B# returns HIGH. At this point, data
can be read from the device. Starting from the initial column address to the end of the
page, read the data by repeatedly pulsing RE# at the maximum
Add 2
Col
t
R), monitor the R/B# signal; or alternately, issue a READ STATUS (70h) com-
Add 1
Row
Add 2
Row
Add 3
Row
23
2Gb, 4GB, 8Gb: x8, x16 NAND Flash Memory
30h
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t WB
t R
Busy
t AR
t RR
t CLR
D
OUT
N
t RP
Command Definitions
D
N + 1
t RC
OUT
©2005 Micron Technology, Inc. All rights reserved.
t
RC rate (see Figure 17).
Don’t Care
D
t RHZ
OUT
M