MT29F8G08FACWP Micron Technology, MT29F8G08FACWP Datasheet - Page 42

• Manufacturer Part Number: MT29F8G08FACWP
• Description: NAND Flash Memory
• Manufacturer: Micron Technology

Table 15:
PDF: 09005aef814b01a2 / Source: 09005aef814b01c7
2_4_8gb_nand_m49a__2.fm - Rev. A 3/06 EN
Parameter
Sequential read current
Program current
Erase current
Standby current (TTL)
Standby current (CMOS)
Input leakage current
Input leakage current
(PRE)
Output leakage current
Input high voltage
Input low voltage
(all inputs)
Output high voltage
Output low voltage
Output low current (R/B#)
www.DataSheet4U.net
MT29F2GxxAAC
MT29F4GxxBAC
MT29F8GxxFAC
MT29F2GxxAAC
MT29F4GxxBAC
MT29F8GxxFAC
MT29F2GxxAAC
MT29F4GxxBAC
MT29F8GxxFAC
M29FxGxxxAC 3V Device DC and Operating Characteristics
Note:
CE#, CLE, ALE, WE#, RE#, WP#, PRE, R/B#
The PRE function is available only on commercial-temperature devices.
t
RC = 30ns, CE# = V
PRE = WP# = 0V/V
PRE = WP# = 0V/V
I/O[7:0], I/O[15:0]
CE# = V
V
V
OUT
I
IN
V
Conditions
OH
I
OL
V
CE# = V
IN
OL
= 0V to V
= 0V to V
= –400µA
= 0V/V
= 2.1mA
= 0.4V
CC
–
–
–
– 0.2V,
IL
IH
, I
CC
,
CC
OUT
CC
CC
CC
= 0mA
42
2Gb, 4GB, 8Gb: x8, x16 NAND Flash Memory
Micron Technology, Inc., reserves the right to change products or specifications without notice.
I
Symbol
OL
I
V
Icc1
I
I
I
I
LIPRE
V
V
CC
CC
I
V
SB
SB
(R/B#)
I
LO
OH
OL
LI
IH
IL
1
2
2
3
0.8 x V
Min
–0.3
2.4
8
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Electrical Characteristics
CC
©2005 Micron Technology, Inc. All rights reserved.
Typ
15
15
15
10
20
40
10
–
–
–
–
–
–
–
–
–
–
–
–
V
0.2 x V
CC
Max
100
200
±10
±20
±40
±10
±10
±20
±40
0.4
30
30
30
50
1
–
–
+ 0.3
CC
Unit
mA
mA
mA
mA
mA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
V
V
V
V