MT5C6401 Micron Technology, MT5C6401 Datasheet

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MT5C6401

Manufacturer Part Number
MT5C6401
Description
64K x 1 SRAM
Manufacturer
Micron Technology
Datasheet

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SRAM
FEATURES
• High speed: 9, 10, 12, 15, 20 and 25ns
• High-performance, low-power, CMOS double-metal
• Single +5V 10% power supply
• Easy memory expansion with / C / E option
• All inputs and outputs are TTL-compatible
OPTIONS
• Timing
• Packages
• 2V data retention
• Temperature
• Part Number Example: MT5C6401DJ-10 L
NOTE: Not all combinations of operating temperature, speed, data retention
and low power are necessarily available. Please contact the factory for availabil-
ity of specific part number combinations.
GENERAL DESCRIPTION
a four-transistor memory cell with a high-speed, low-power
CMOS process. Micron SRAMs are fabricated using double-
layer metal, double-layer polysilicon technology.
Micron offers chip enable (/ C / E ) with all organizations. This
enhancement can place the outputs in High-Z for addi-
tional flexibility in system design. The x1 configuration
features separate data input and output.
MT5C6401
REV. 12/93
The MT5C6401 is organized as a 65,556 x 1 SRAM using
For flexibility in high-speed memory applications,
process
9ns access
10ns access
12ns access
15ns access
20ns access
25ns access
Plastic DIP (300 mil)
Plastic SOJ (300 mil)
Commercial (0 C to +70 C)
Industrial
Automotive (-40 C to +125 C)
Extended
(-40 C to +85 C)
(-55 C to +125 C)
MARKING
None
None
- 9
-10
-12
-15
-20
-25
AT
XT
DJ
IT
L
1
64K x 1 SRAM
enable (? W / E ) and / C / E inputs are both LOW. Reading is
accomplished when ? W / E remains HIGH and / C / E goes to
LOW. The device offers a reduced power standby mode
when disabled. This allows system designers to meet low
standby power requirements.
all inputs and outputs are fully TTL-compatible.
Writing to these devices is accomplished when write
All devices operate from a single +5V power supply and
Micron Semiconductor, Inc., reserves the right to change products or specifications without notice.
PIN ASSIGNMENT (Top View)
Vss
WE
NC
A0
A1
A2
A3
A4
A5
A6
A7
Vss
WE
Q
A0
A1
A2
A3
A4
A5
A6
A7
Q
24-Pin SOJ
22-Pin DIP
1
2
3
4
5
6
7
8
9
10
11
12
1
2
3
4
5
6
7
8
9
10
11
(SA-2)
(SD-1)
22
21
20
19
18
17
16
15
14
13
12
24
23
22
21
20
19
18
17
16
15
14
13
OBSOLETE 8/31/94
64K x 1 SRAM
Vcc
A15
A14
A13
A12
A11
A10
A9
A8
D
CE
Vcc
A15
A14
A13
A12
NC
A11
A10
A9
A8
D
CE
1993, Micron Semiconductor, Inc.
MT5C6401

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MT5C6401 Summary of contents

Page 1

... Please contact the factory for availabil- ity of specific part number combinations. GENERAL DESCRIPTION The MT5C6401 is organized as a 65,556 x 1 SRAM using a four-transistor memory cell with a high-speed, low-power CMOS process. Micron SRAMs are fabricated using double- layer metal, double-layer polysilicon technology ...

Page 2

... INPUT H X DON’T CARE L H DON’T CARE L L DATA-IN 2 OBSOLETE 8/31/94 MT5C6401 64K x 1 SRAM (LSB) POWER DOWN A OUTPUT POWER HIGH-Z STANDBY Q ACTIVE HIGH-Z ACTIVE Micron Semiconductor, Inc., reserves the right to change products or specifications without notice. 1993, Micron Semiconductor, Inc. ...

Page 3

... SYMBOL MAX UNITS Micron Semiconductor, Inc., reserves the right to change products or specifications without notice. MT5C6401 NOTES UNITS NOTES NOTES pF 4 ...

Page 4

... LZWE HZWE Micron Semiconductor, Inc., reserves the right to change products or specifications without notice. 4 OBSOLETE 8/31/94 MT5C6401 64K x 1 SRAM -15 -20 - ...

Page 5

... INDUSTRIAL TEMPERATURE SPECIFICATIONS (IT) The following specifications are to be used for Industrial Temperature (IT) MT5C6401 SRAMs. (- DESCRIPTION CONDITIONS / Power Supply V Current: Operating f = MAX = 1/ outputs open / Power Supply V Current: Standby f = MAX = 1/ outputs open / DATA RETENTION ELECTRICAL CHARACTERISTICS (L version only) ...

Page 6

... AUTOMOTIVE AND EXTENDED TEMPERATURE SPECIFICATIONS (AT AND XT) The following specifications are to be used for Automotive Temperature (AT) and Extended Temperature (XT) MT5C6401 SRAMs. (- 125 C - AT) (- DESCRIPTION CONDITIONS / Power Supply Current: Operating f = MAX = 1/ outputs open / Power Supply Current: Standby f = MAX = 1/ outputs open ...

Page 7

... Fig. 2 OUTPUT LOAD EQUIVALENT EQUIVALENT RC = Read Cycle Time. MIN TYP MAX 2 130 300 210 400 Micron Semiconductor, Inc., reserves the right to change products or specifications without notice. MT5C6401 +5V 480 5 pF UNITS NOTES 1993, Micron Semiconductor, Inc. ...

Page 8

... RC VALID READ CYCLE NO ACE t LZCE OBSOLETE 8/31/94 MT5C6401 64K x 1 SRAM 4. DATA VALID HZCE DATA VALID t PD DON’T CARE UNDEFINED Micron Semiconductor, Inc., reserves the right to change products or specifications without notice. ...

Page 9

... Enable Controlled HIGH-Z WRITE CYCLE NO. 2 (Write Enable Controlled HZWE 9 OBSOLETE 8/31/94 MT5C6401 64K x 1 SRAM DATA VALID DATA VALID t LZWE HIGH-Z DON’T CARE UNDEFINED Micron Semiconductor, Inc ...

Page 10

... TYP 1.000 (25.38) TYP MAX or typical where noted. MIN 10 OBSOLETE 8/31/94 MT5C6401 64K x 1 SRAM .325 (8.26) .300 (7.62) .014 (0.36) .008 (0.20) .380 (9.65) .330 (8.38) Micron Semiconductor, Inc., reserves the right to change products or specifications without notice. 1993, Micron Semiconductor, Inc. ...

Page 11

... MIN Micron is a registered trademark of Micron Technology, Inc. 11 OBSOLETE 8/31/94 MT5C6401 64K x 1 SRAM .145 (3.68) .132 (3.35) .095 (2.41) .275 (6.99) .080 (2.03) .260 (6.60) Micron Semiconductor, Inc., reserves the right to change products or specifications without notice. 1993, Micron Semiconductor, Inc. .118 (3.00) ...

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