STB160NF3LL ST Microelectronics, STB160NF3LL Datasheet

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STB160NF3LL

Manufacturer Part Number
STB160NF3LL
Description
N-CHANNEL POWER MOSFET
Manufacturer
ST Microelectronics
Datasheet

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STB160NF3LLT4
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DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
(
(*) Current Limited by Package
May 2002
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
ST160NF3LL
Pulse width limited by safe operating area.
TYPICAL R
LOW THRESHOLD DRIVE
ULTRA LOW ON-RESISTANCE
LOGIC LEVEL DEVICE
100% AVALANCHE TESTED
SURFACE-MOUNTING D
POWER PACKAGE IN TUBE (NO SUFFIX) OR
IN TAPE & REEL (SUFFIX “T4”)
HIGH CURRENT, HIGH SWITCHING SPEED
MOTOR CONTROL, AUDIO AMPLIFIERS
DC-DC & DC-AC CONVERTERS
SOLENOID AND RELAY DRIVERS
Symbol
E
I
V
DM
V
I
V
P
AS
T
DGR
D
I
T
GS
stg
DS
D
TYPE
tot
(
j
(
(1)
Drain-source Voltage (V
Drain-gate Voltage (R
Gate- source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Single Pulse Avalanche Energy
Storage Temperature
Max. Operating Junction Temperature
DS
(on) = 0.0026
V
30 V
DSS
Parameter
2
<0.003
PAK (TO-263)
R
DS(on)
C
N-CHANNEL 30V - 0.0026
GS
= 25°C
GS
= 20 k )
= 0)
C
C
160 A
= 25°C
= 100°C
I
D
STripFET™ II POWER MOSFET
INTERNAL SCHEMATIC DIAGRAM
(1) Starting T
j
= 25
-55 to 175
o
Value
C, I
± 15
160
160
640
300
1.2
30
30
2
D
STB160NF3LL
= 80A, V
(Suffix “T4”)
TO-263
D
2
PAK
DD
- 160A D
1
= 20V
3
PRELIMINARY DATA
2
W/°C
PAK
Unit
°C
W
V
V
V
A
A
A
J
1/7

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STB160NF3LL Summary of contents

Page 1

... This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. N-CHANNEL 30V - 0.0026 STripFET™ II POWER MOSFET R I DS(on) D 160 A INTERNAL SCHEMATIC DIAGRAM = 25° 100° 25°C C (1) Starting T STB160NF3LL - 160A D PRELIMINARY DATA PAK TO-263 (Suffix “T4”) Value 30 30 ± 15 160 160 640 300 2 1.2 ...

Page 2

... STB160NF3LL THERMAL DATA Rthj-case Thermal Resistance Junction-case Rthj-amb Thermal Resistance Junction-ambient T Maximum Lead Temperature For Soldering Purpose l ELECTRICAL CHARACTERISTICS (T OFF Symbol Parameter V Drain-source (BR)DSS Breakdown Voltage Zero Gate Voltage I DSS Drain Current (V GS Gate-body Leakage I GSS Current ( (*) ON Symbol Parameter ...

Page 3

... (Resistive Load, Figure 3) Test Conditions I = 160 160 A di/dt = 100A/µ 150° (see test circuit, Figure 5) STB160NF3LL Min. Typ. Max. Unit 50 ns 350 ns 95 125 Min. Typ. Max. Unit 150 ns 120 ns Min. ...

Page 4

... STB160NF3LL Fig. 1: Unclamped Inductive Load Test Circuit Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 4/7 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit ...

Page 5

... PAK MECHANICAL DATA MAX. MIN. 4.6 0.173 2.69 0.098 0.23 0.001 0.93 0.028 1.7 0.045 0.6 0.018 1.36 0.048 9.35 0.352 8 10.4 0.394 8.5 5.28 0.192 15.85 0.591 1.4 0.050 1.75 0.055 3.2 0.094 0.4 8° STB160NF3LL inch. TYP. TYP. 0.181 0.106 0.009 0.037 0.067 0.024 0.054 0.368 0.315 0.409 0.334 0.208 0.624 0.055 0.069 0.126 0.015 0° 8° 5/7 ...

Page 6

... STB160NF3LL 2 D PAK FOOTPRINT TAPE AND REEL SHIPMENT (suffix ”T4”)* TAPE MECHANICAL DATA mm DIM. MIN. MAX. MIN. A0 10.5 10.7 0.413 B0 15.7 15.9 0.618 D 1.5 1.6 0.059 D1 1.59 1.61 0.062 E 1.65 1.85 0.065 F 11.4 11.6 0.449 K0 4.8 5.0 0.189 P0 3.9 4.1 0.153 P1 11.9 12.1 0.468 P2 1.9 2.1 0075 R 50 1.574 T 0.25 0.35 .0.0098 W 23.7 24.3 0.933 * on sales type 6/7 TUBE SHIPMENT (no suffix)* inch MAX. 0.421 0.626 ...

Page 7

... Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. The ST logo is registered trademark of STMicroelectronics 2002 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES http://www.st.com STB160NF3LL 7/7 ...

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