STB16NB25

Manufacturer Part NumberSTB16NB25
DescriptionN-CHANNEL MOSFET
ManufacturerST Microelectronics
STB16NB25 datasheet
 
1
Page 1
2
Page 2
3
Page 3
4
Page 4
5
Page 5
6
Page 6
7
Page 7
8
Page 8
Page 1/8

Download datasheet (109Kb)Embed
Next
www.DataSheet4U.com
N - CHANNEL 250V - 0.220 - 16A - TO-263
TYPE
V
R
DSS
DS(on)
ST B16NB25
250 V
< 0.28
TYPICAL R
= 0.220
DS(on)
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
EXTREMELY HIGH dv/dt CAPABILITY
FOR THROUGH-HOLE VERSION CONTACT
SALES OFFICE
ADD SUFFIX ”T4” FOR ORDERING IN TAPE
& REEL
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
HIGH CURRENT, HIGH SPEED SWITCHING
UNINTERRUPTIBLE POWER SUPPLY (UPS)
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Symb ol
Parameter
V
Drain-source Voltage (V
DS
GS
V
Drain- gate Voltage (R
= 20 k )
DGR
GS
V
G ate-source Voltage
GS
I
Drain Current (continuous) at T
D
I
Drain Current (continuous) at T
D
I
( )
Drain Current (pulsed)
DM
P
T otal Dissipation at T
= 25
tot
c
Derating Factor
dv/dt(
) Peak Diode Recovery voltage slope
1
T
Storage T emperature
s tg
T
Max. Operating Junction Temperature
j
( ) Pulse width limited by safe operating area
March 1999
PowerMESH
I
D
16 A
INTERNAL SCHEMATIC DIAGRAM
= 0)
o
= 25
C
c
o
= 100
C
c
o
C
(
) I
16A, di/dt
200 A/ s, V
1
SD
STB16NB25
MOSFET
3
1
2
D
PAK
TO-263
(suffix ”T4”)
Value
Unit
250
V
250
V
30
V
16
A
10
A
64
A
140
W
o
1.12
W /
C
5.5
V/ns
o
-65 to 150
C
o
150
C
V
, Tj
T
DD
(BR)DSS
JMAX
1/8

STB16NB25 Summary of contents

  • Page 1

    ... Pulse width limited by safe operating area March 1999 PowerMESH INTERNAL SCHEMATIC DIAGRAM = 100 16A, di/dt 200 STB16NB25 MOSFET PAK TO-263 (suffix ”T4”) Value Unit 250 V 250 140 ...

  • Page 2

    ... STB16NB25 THERMAL DATA R Thermal Resistance Junction-case thj -case Thermal Resistance Junction-ambient Rthj -amb R Thermal Resistance Case-sink thc-sink T Maximum Lead Temperature F or Soldering Purpose l AVALANCHE CHARACTERISTICS Symbo l I Avalanche Current, Repetitive or Not-Repetitive AR (pulse width limited Single Pulse Avalanche Energy AS o (starting T ...

  • Page 3

    ... Load, see fig. 5) Test Con ditions di/dt = 100 150 (see test circuit, fig. 5) Thermal Impedance STB16NB25 Min. Typ. Max. Unit Min. Typ. Max. Unit 35 ns ...

  • Page 4

    ... STB16NB25 Output Characteristics Transconductance Gate Charge vs Gate-source Voltage 4/8 Transfer Characteristics Static Drain-source On Resistance Capacitance Variations ...

  • Page 5

    ... Normalized Gate Threshold Voltage vs Temperature Source-drain Diode Forward Characteristics STB16NB25 Normalized On Resistance vs Temperature 5/8 ...

  • Page 6

    ... STB16NB25 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit ...

  • Page 7

    ... DETAIL”A” PAK) MECHANICAL DATA MAX. MIN. 4.6 0.173 2.69 0.098 0.93 0.027 1.7 0.044 0.6 0.017 1.36 0.047 9.35 0.352 10.4 0.393 5.28 0.192 15.85 0.590 1.4 0.050 1.75 0.055 C DETAIL ”A” STB16NB25 inch TYP. MAX. 0.181 0.106 0.036 0.067 0.023 0.053 0.368 0.409 0.208 0.624 0.055 0.068 P011P6/E 7/8 ...

  • Page 8

    ... STB16NB25 Information furnished is believed to be accurate and reliable. However, STMicroelect r onics assumes no responsibil ity for the consequences of use of such information nor for any infringement of patents or other rights of third part i es which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectro nics. Specific ation mentioned in this publication are subjec t to change without notice ...