MJE13006_13007 Fairchild, MJE13006_13007 Datasheet

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MJE13006_13007

Manufacturer Part Number
MJE13006_13007
Description
High Voltage Switch Mode Application
Manufacturer
Fairchild
Datasheet
©2001 Fairchild Semiconductor Corporation
High Voltage Switch Mode Application
• High Speed Switching
• Suitable for Switching Regulator and Motor Control
NPN Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
* Pulse test: PW 300 s, Duty cycle 2%
I
I
V
V
V
I
P
T
T
BV
I
h
V
V
C
f
t
t
t
CP
B
C
EBO
T
ON
STG
F
FE
J
STG
CBO
CEO
EBO
C
CE
BE
Symbol
Symbol
ob
CEO
(sat)
(sat)
*DC Current Gain
*Collector-Emitter Saturation Voltage
*Base-Emitter Saturation Voltage
Collector- Emitter Breakdown Voltage
Emitter Cut-off Current
Output Capacitance
Current Gain Bandwidth Product
Turn ON Time
Storage Time
Fall Time
Collector-Base Voltage
Collector-Emitter Voltage
Emitter- Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (T
Junction Temperature
Storage Temperature
Parameter
C
: MJE13006
: MJE13007
T
=25 C)
C
MJE13006/13007
=25 C unless otherwise noted
Parameter
T
C
=25 C unless otherwise noted
I
V
V
V
I
I
I
I
I
V
V
V
I
R
C
C
C
C
C
C
B1
EB
CE
CE
CB
CE
CC
L
= 10mA, I
= 2A, I
= 5A, I
= 8A, I
= 2A, I
= 5A, I
= 50
= -I
Test Condition
: MJE13006
: MJE13007
: MJE13007
: MJE13006
= 9V, I
= 5V, I
= 5V, I
= 10V, f = 0.1MHz
= 10V, I
= 125V, I
B2
B
B
B
B
B
= 1A
C
= 0.4A
= 1A
= 2A
= 0.4A
= 1A
C
C
B
C
= 0
= 2A
= 5A
C
= 0
= 0.5A
= 5A
1.Base
1
Min.
300
400
8
5
4
- 65 ~ 150
2.Collector
Value
600
700
300
400
150
16
80
9
8
4
Typ.
110
TO-220
Max.
3.Emitter
1.2
1.6
1.6
0.7
60
30
1
1
2
3
3
Rev. A1, February 2001
Units
W
Units
V
V
V
V
V
A
A
A
MHz
C
C
mA
pF
V
V
V
V
V
V
V
s
s
s

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MJE13006_13007 Summary of contents

Page 1

... Output Capacitance ob f Current Gain Bandwidth Product T t Turn ON Time ON t Storage Time STG t Fall Time F * Pulse test: PW 300 s, Duty cycle 2% ©2001 Fairchild Semiconductor Corporation MJE13006/13007 T =25 C unless otherwise noted C Parameter : MJE13006 : MJE13007 : MJE13006 : MJE13007 = =25 C unless otherwise noted C ...

Page 2

... V [V], COLLECTOR-BASE VOLTAGE CB Figure 3. Collector Output Capacitance 10000 t STG 1000 100 0 [A], COLLECTOR CURRENT C Figure 5. Turn Off Time ©2001 Fairchild Semiconductor Corporation 0.1 0.01 0.1 10 Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 1000 100 V =125V ...

Page 3

... Typical Characteristics 100 100 C], CASE TEMPERATURE C Figure 7. Power Derating ©2001 Fairchild Semiconductor Corporation (Continued) 125 150 175 Rev. A1, February 2001 ...

Page 4

... Package Demensions 1.27 2.54TYP [2.54 ©2001 Fairchild Semiconductor Corporation TO-220 9.90 0.20 (8.70) ø3.60 0.10 1.52 0.10 0.10 0.80 0.10 2.54TYP ] [2.54 ] 0.20 0.20 10.00 0.20 4.50 0.20 +0.10 1.30 –0.05 +0.10 0.50 2.40 0.20 –0.05 Dimensions in Millimeters Rev. A1, February 2001 ...

Page 5

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ CMOS™ EnSigna™ FACT™ FACT Quiet Series™ ...

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