2SD1113 Hitachi Semiconductor, 2SD1113 Datasheet
2SD1113
Related parts for 2SD1113
2SD1113 Summary of contents
Page 1
... Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value 2SD1113( Base 2. Collector (Flange) 3. Emitter Symbol V CBO V CEO V EBO I ...
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... Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter sustain voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Turn on time Turn off time Note: 1. Pulse test. Maximum Collector Dissipation Curve ...
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... 1.0 0.5 0.2 0.1 0.1 10,000 5,000 2,000 1,000 500 200 = 0 100 5 0.1 0.2 (V) Saturation Voltage vs. Collector Current l = 200 Pulse V BE (sat (sat) 0.2 0.5 1 Collector current I (A) C 2SD1113(K) DC Current Transfer Ratio vs. Collector Current Pulse 0.5 1 Collector current I ( ...
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MAX 10.16 0.2 9.5 8.0 1.5 MAX 0.76 2.54 0.5 2.54 +0.1 3.6 -0.08 0.1 0.5 0.5 Hitachi Code JEDEC EIAJ Weight (reference value) 4.44 0.2 1.26 0.15 2.7 MAX 0.1 TO-220AB Conforms Conforms 1.8 g Unit: mm ...
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... This product is not designed to be radiation resistant one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. ...