2SD1119 Panasonic Semiconductor, 2SD1119 Datasheet
2SD1119
Manufacturer Part Number
2SD1119
Description
Silicon NPN epitaxial planer type(For low-frequency power amplification0
Manufacturer
Panasonic Semiconductor
Datasheet
1.2SD1119.pdf
(2 pages)
Available stocks
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Part Number
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Quantity
Price
Part Number:
2SD1119
Manufacturer:
PANASO
Quantity:
20 000
Part Number:
2SD1119-R(TX)
Manufacturer:
PANASONIC/松下
Quantity:
20 000
Company:
Part Number:
2SD1119-R(TX)
Manufacturer:
PANASONIC
Quantity:
19 580
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Part Number:
2SD11190RL
Manufacturer:
PANASONIC
Quantity:
1 364
Transistor
2SD1119
Silicon NPN epitaxial planer type
For low-frequency power amplification
*
*1
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Printed circuit board: Copper foil area of 1cm
thickness of 1.7mm for the collector portion
Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
h
FE1
Features
Low collector to emitter saturation voltage V
Satisfactory operation performances at high efficiency with the
low-voltage power supply.
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
Absolute Maximum Ratings
Electrical Characteristics
Marking Symbol
Rank classification
Parameter
Rank
h
Parameter
FE1
230 ~ 380
Symbol
V
V
V
I
I
P
T
T
TQ
CP
C
Q
C
j
stg
CBO
CEO
EBO
*
I
V
V
h
h
V
f
C
CBO
T
FE1
FE2
(Ta=25˚C)
Symbol
CEO
EBO
CE(sat)
ob
*1
(Ta=25˚C)
340 ~ 600
–55 ~ +150
2
Ratings
TR
R
or more, and the board
150
40
25
7
5
3
1
V
I
I
V
V
I
V
V
CE(sat)
C
E
C
CB
CE
CE
CB
CB
= 1mA, I
= 10 A, I
= 3A, I
= 2V, I
= 2V, I
= 10V, I
= 6V, I
= 20V, I
.
B
C
C
= 0.1A
E
B
Unit
C
Conditions
˚C
˚C
E
E
W
V
V
V
A
A
= 0.5A
= 2A
= –50mA, f = 200MHz
= 0
= 0
= 0
= 0, f = 1MHz
*2
*2
*2
Marking symbol :
1:Base
2:Collector
3:Emitter
0.4 0.08
0.5 0.08
1.5 0.1
45
3
min
230
150
25
7
3.0 0.15
4.5 0.1
1.6 0.2
2
marking
EIAJ:SC–62
Mini Power Type Package
1
150
T
typ
*2
Pulse measurement
max
600
0.1
50
1.5 0.1
1
0.4 0.04
Unit: mm
MHz
Unit
pF
V
V
V
A
1
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2SD1119 Summary of contents
Page 1
... Transistor 2SD1119 Silicon NPN epitaxial planer type For low-frequency power amplification Features Low collector to emitter saturation voltage V Satisfactory operation performances at high efficiency with the low-voltage power supply. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing ...
Page 2
... A ) Collector current — 100 f=1MHz Ta=25˚ 100 ( V ) Collector to base voltage V CB 2SD1119 I — =2V CE 25˚C 5 Ta=75˚C –25˚ 0.4 0.8 1.2 1.6 2 Base to emitter voltage — 600 V =2V ...