2SD1136

Manufacturer Part Number2SD1136
DescriptionSILICON POWER TRANSISTOR
ManufacturerSavantIC
2SD1136 datasheet
 
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SavantIC Semiconductor
Silicon NPN Power Transistors
DESCRIPTION
www.datasheet4u.com
·With TO-220C package
·High collector-base breakdown voltage
: V
=200V(min)
CBO
APPLICATIONS
·For power switching and TV vertical
deflection output applications
PINNING
PIN
DESCRIPTION
1
Base
Collector;connected to
2
mounting base
3
Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
V
Collector-base voltage
CBO
V
Collector-emitter voltage
CEO
V
Emitter-base voltage
EBO
I
Collector current
C
I
Collector current-Peak
CM
P
Collector power dissipation
C
T
Junction temperature
j
T
Storage temperature
stg
Product Specification
CONDITIONS
Open emitter
Open base
Open collector
T
=25
a
T
=25
C
2SD1136
VALUE
UNIT
200
V
80
V
5
V
4
A
5
A
1.8
W
30
150
-45~150

2SD1136 Summary of contents

  • Page 1

    ... Emitter-base voltage EBO I Collector current C I Collector current-Peak CM P Collector power dissipation C T Junction temperature j T Storage temperature stg Product Specification CONDITIONS Open emitter Open base Open collector T = =25 C 2SD1136 VALUE UNIT 200 1 150 -45~150 ...

  • Page 2

    ... CEO I Collector cut-off current EBO h DC current gain FE Product Specification CONDITIONS MIN I =50mA =1mA A;I =0 A;I =0 =200V = 2SD1136 TYP. MAX UNIT 1 ...

  • Page 3

    ... SavantIC Semiconductor Silicon NPN Power Transistors PACKAGE OUTLINE www.datasheet4u.com Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 Product Specification 2SD1136 ...