2SD1180

Manufacturer Part Number2SD1180
DescriptionSILICON POWER TRANSISTOR
ManufacturerSavantIC
2SD1180 datasheet
 
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SavantIC Semiconductor
Silicon NPN Power Transistors
DESCRIPTION
www.datasheet4u.com
·With TO-126 package
·Low collector saturation voltage
APPLICATIONS
·Designed for use in audio and radio
frequency power amplifiers
PINNING
PIN
DESCRIPTION
1
Emitter
Collector;connected to
2
mounting base
3
Base
Absolute maximum ratings(Ta=25
SYMBOL
PARAMETER
V
Collector-base voltage
CBO
V
Collector-emitter voltage
CEO
V
Emitter-base voltage
EBO
I
Collector current
C
I
Collector current-peak
CM
P
Collector power dissipation
C
T
Junction temperature
j
T
Storage temperature
stg
)
CONDITIONS
Open emitter
Open base
Open collector
T
=25
a
T
=25
C
Product Specification
2SD1180
VALUE
UNIT
120
V
110
V
5
V
1.5
A
2.5
A
1.2
W
20
150
-55~150

2SD1180 Summary of contents

  • Page 1

    ... Emitter-base voltage EBO I Collector current C I Collector current-peak CM P Collector power dissipation C T Junction temperature j T Storage temperature stg ) CONDITIONS Open emitter Open base Open collector T = =25 C Product Specification 2SD1180 VALUE UNIT 120 V 110 1.5 A 2 150 -55~150 ...

  • Page 2

    ... DC current gain FE Product Specification CONDITIONS I =10mA =100µ =100µ =1A; I =0. =1A; I =0. =120V =3V =150mA ; V = 2SD1180 MIN TYP. MAX UNIT 110 V 120 0.7 V 1.3 V 1.0 µA 1.0 µA 100 ...

  • Page 3

    ... SavantIC Semiconductor Silicon NPN Power Transistors PACKAGE OUTLINE www.datasheet4u.com Fig.2 Outline dimensions 3 Product Specification 2SD1180 ...