2SD2098 ROHM Electronics, 2SD2098 Datasheet - Page 3

• Manufacturer Part Number: 2SD2098
• Description: (2SD1961 / 2SD2097 / 2SD2098) Low Frequency Silicon Power NPN Transistor
• Manufacturer: ROHM Electronics

Transistors
Electrical characteristic curves
Fig.1 Grounded emitter propagation
0.05
0.02
0.01
5000
2000
1000
0.05
0.02
0.01
200
0.5
0.2
0.1
5m
2m
1m
500
100
0.5
0.2
0.1
10
50
20
10
5
2
1
2
1
2m 5m 0.010.02 0.05 0.1 0.2 0.5 1 2
5
1m
0
Fig.7 Collector-emitter
BASE TO EMITTER VOLTAGE : V
2m 5m 0.010.02 0.05 0.10.2 0.5 1 2
Fig.4 DC current gain vs.
0.2
characteristics
COLLECTOR CURRENT : I
COLLECTOR CURRENT : I
Ta=100°C
saturation voltage vs.
collector current ( ΙΙ )
−25°C
0.4
collector current ( ΙΙ )
25°C
Ta=100°C
−25°C
0.6
25°C
Ta=100°C
−25°C
0.8
25°C
1.0
C
C
V
l
C
(A)
V
(A)
CE
1.2
/l
CE
BE
B
=2V
=10
=1V
(V)
5 10
5 10
1.4
0.05
0.02
0.01
COLLECTOR TO EMITTER VOLTAGE : V
5000
2000
1000
0.5
0.2
0.1
500
200
100
5
4
3
2
1
0
50
20
10
2
1
2m 5m0.010.02 0.05 0.1 0.2 0.5 1 2
0
5
Fig.2 Grounded emitter output
1m
50mA
45mA
Fig.8 Collector-emitter
Fig.5 DC current gain vs.
2m 5m0.010.02 0.050.10.2 0.5 1 2
COLLECTOR CURRENT : I
COLLECTOR CURRENT : I
0.4
characteristics
saturation voltage vs.
collector current ( ΙΙΙ )
collector current ( ΙΙΙ )
35mA
Ta=100°C
0.8
40mA
−25°C
25°C
Ta=100°C
30mA
−25°C
25°C
25mA
1.2
20mA
Ta=25°C
1.6
C
15mA
C
l
C
(A)
I
V
/l
B
(A)
10mA
=0mA
B
CE
5mA
=30
CE
=2V
5 10
5 10
2.0
(V)
5000
2000
1000
0.05
0.02
0.01
0.05
0.02
0.01
500
200
100
0.5
0.2
0.1
2SD2098 / 2SD2118
0.5
0.2
0.1
50
20
10
5
2
1
2m 5m0.010.02 0.05 0.1 0.2 0.5 1 2
1m
2
1
2m
Fig.9 Collector-emitter
2m 5m 0.010.02 0.050.1 0.2 0.5 1 2
Fig.6 Collector-emitter
Fig.3 DC current gain vs.
5m0.010.02 0.05
COLLECTOR CURRENT : I
COLLECTOR CURRENT : I
COLLECTOR CURRENT : I
I
C
/I
saturation voltage vs.
collector current (IV)
B
=50
40
30
10
saturation voltage vs.
collector current ( Ι )
collector current ( Ι )
Rev.B
Ta=100°C
0.1
0.2 0.5 1
−25°C
25°C
2V
V
C
C
C
Ta=25°C
Ta=25°C
1V
l
CE
2
(A)
C
(A)
(A)
/l
=5V
B
=40
5 10
5 10
5 10
3/4