BC847BWT1 Leshan Radio Company, BC847BWT1 Datasheet

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BC847BWT1

Manufacturer Part Number
BC847BWT1
Description
General Purpose Transistors(NPN Silicon)
Manufacturer
Leshan Radio Company
Datasheet

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General Purpose Transistors
NPN Silicon
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
DEVICE MARKING
ELECTRICAL CHARACTERISTICS
applications. They are housed in the SOT–323/SC–70 which is
designed for low power surface mount applications.
1.FR–5=1.0 x 0.75 x 0.062in
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I
Collector–Emitter Breakdown Voltage
(I
Collector–Base Breakdown Voltage
(I
Emitter–Base Breakdown Voltage
(I
Collector Cutoff Current (V
BC846AWT1 = 1A; BC846BWT1 = 1B; BC847AWT1 = 1E; BC847BWT1 = 1F;
BC847CWT1 = 1G; BC848AWT1 = 1J; BC848BWT1 = 1K; BC848CWT1 = 1L
These transistors are designed for general purpose amplifier
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
C
C
C
E
Characteristic
Total Device Dissipation FR– 5 Board, (1)
T
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Junction and Storage Temperature
= 1.0 A)
A
= 10 mA)
= 10 A, V
= 10 A)
= 25°C
Rating
EB
= 0)
Characteristic
(V
CB
CB
= 30 V)
= 30 V, T
Symbol
V
V
V
I
CEO
CBO
EBO
C
BC846 Series
BC847 Series
BC848 Series
BC846 Series
BC847 Series
BC848 Series
BC847 Series
BC848 Series
BC846 Series
BC847 Series,
BC848 Series
A
BC846 Series
(T
= 150°C)
A
= 25°C unless otherwise noted.)
BC846
100
6.0
65
80
T
Symbol
J
R
P
P
, T
BC847
D
D
JA
100
6.0
stg
45
50
1
BASE
Symbol
V
V
V
V
I
(BR)CEO
(BR)CES
(BR)CBO
(BR)EBO
CBO
–55 to +150
BC848
100
Max
5.0
150
30
30
833
2.4
3
COLLECTOR
2
EMITTER
Min
6.0
6.0
5.0
65
45
30
80
50
30
80
50
30
LESHAN RADIO COMPANY, LTD.
mAdc
Unit
mW/°C
V
V
V
°C/W
Unit
mW
°C
Typ
Max
5.0
15
BC846AWT1,BWT1
BC847AWT1,BWT1
BC848AWT1,BWT1
CASE 419–02, STYLE 3
1
SOT–323 /SC–70
Unit
nA
v
v
v
v
A
CWT1
CWT1
2
3
K4–1/4

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BC847BWT1 Summary of contents

Page 1

... Characteristic Total Device Dissipation FR– 5 Board, ( 25°C A Thermal Resistance, Junction to Ambient Total Device Dissipation Junction and Storage Temperature DEVICE MARKING BC846AWT1 = 1A; BC846BWT1 = 1B; BC847AWT1 = 1E; BC847BWT1 = 1F; BC847CWT1 = 1G; BC848AWT1 = 1J; BC848BWT1 = 1K; BC848CWT1 = 1L ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage ( mA) C Collector–Emitter Breakdown Voltage ...

Page 2

... Figure 1. Normalized DC Current Gain 2.0 1.6 1 0.8 0.4 0 0.02 0 BASE CURRENT (mA) B Figure 3. Collector Saturation Region LESHAN RADIO COMPANY, LTD 25°C unless otherwise noted) (Continued) A Symbol mA 0.5 mA CE(sat 100 mA 5 0.5 mA BE(sat) = 100 mA ...

Page 3

... COLLECTOR CURRENT (mA) C Figure 7. DC Current Gain 2.0 1.6 100mA 20mA 50mA 1 0 0.4 0 0.02 0.05 0.1 0.2 0.5 1.0 2 BASE CURRENT (mA) B Figure 9. Collector Saturation Region LESHAN RADIO COMPANY, LTD. 400 300 T = 25°C A 200 100 0.5 0.7 1 Figure 6. Current–Gain – Bandwidth Product 1 25°C A 0.8 V BE(sat) ...

Page 4

... BC846AWT1, BWT1 BC847AWT1, BWT1, CWT1 BC848AWT1, BWT1, CWT1 BC846 6.0 C 4.0 ob 2.0 0.1 0.2 0.5 1.0 2.0 5 REVERSE VOLTAGE (VOLTS) R Figure 11. Capacitance LESHAN RADIO COMPANY, LTD 25°C CE 500 25°C A 200 100 100 Figure 12. Current–Gain – Bandwidth Product 1.0 5 100 ...

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