BC856BWT1 Motorola Inc, BC856BWT1 Datasheet

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BC856BWT1

Manufacturer Part Number
BC856BWT1
Description
CASE 419-02/ STYLE 3 SOT-323/SC-70
Manufacturer
Motorola Inc
Datasheet

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
General Purpose Transistors
PNP Silicon
applications. They are housed in the SOT–323/SC–70 which is
designed for low power surface mount applications.
1. FR–5 = 1.0 x 0.75 x 0.062 in
Thermal Clad is a registered trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
DEVICE MARKING
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation FR– 5 Board, (1)
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
BC856AWT1 = 3A; BC856BWT1 = 3B; BC857AWT1 = 3E; BC857BWT1 = 3F;
BC858AWT1 = 3J; BC858BWT1 = 3K; BC858CWT1 = 3L
Collector – Emitter Breakdown Voltage
Collector – Emitter Breakdown Voltage
Collector – Base Breakdown Voltage
Emitter – Base Breakdown Voltage
Collector Cutoff Current (V CB = –30 V)
Collector Cutoff Current
These transistors are designed for general purpose amplifier
Motorola, Inc. 1996
T A = 25 C
(I C = –10 mA)
(I C = –10 A, V EB = 0)
(I C = –10
(I E = –1.0
m
m
A)
Characteristic
A)
Rating
(V CB = –30 V, T A = 150 C)
Characteristic
Symbol
V CEO
V CBO
V EBO
(T A = 25 C unless otherwise noted)
I C
BC856 Series
BC857 Series
BC858 Series
BC856 Series
BC857 Series
BC858 Series
BC856 Series
BC857 Series
BC858 Series
BC856 Series
BC857 Series
BC858 Series
Symbol
T J , T stg
R
P D
BC856
q
–100
JA
–5.0
–65
–80
BC857
– 55 to +150
–100
–5.0
–45
–50
Max
150
833
BC858
BASE
–100
–5.0
–30
–30
1
COLLECTOR
Unit
mW
C/W
EMITTER
mAdc
Unit
C
V (BR)CEO
V (BR)CBO
V (BR)EBO
V
V
V
V (BR)CES
3
2
Symbol
I CBO
–5.0
–5.0
–5.0
Min
–65
–45
–30
–80
–50
–30
–80
–50
–30
BC858AWT1,BWT1,
BC856AWT1,BWT1
BC857AWT1,BWT1
CASE 419–02, STYLE 3
Motorola Preferred Devices
Typ
SOT–323/SC–70
1
CWT1
2
Order this document
Max
–4.0
by BC856AWT1/D
–15
3
Unit
nA
V
V
V
V
A
1

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BC856BWT1 Summary of contents

Page 1

... THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, ( Thermal Resistance, Junction to Ambient Junction and Storage Temperature DEVICE MARKING BC856AWT1 = 3A; BC856BWT1 = 3B; BC857AWT1 = 3E; BC857BWT1 = 3F; BC858AWT1 = 3J; BC858BWT1 = 3K; BC858CWT1 = 3L ELECTRICAL CHARACTERISTICS ( unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage ( – ...

Page 2

... V CE(sat) — — V BE(sat) — — V BE(on) –0.6 — 100 C ob — NF — Motorola Small–Signal Transistors, FETs and Diodes Device Data Typ Max Unit 90 — — 150 — 270 — 180 250 290 475 520 800 V — ...

Page 3

... C ib 7.0 5 3.0 2.0 1.0 –0.6 –1.0 –2.0 –4.0 –6.0 –0 REVERSE VOLTAGE (VOLTS) Figure 5. Capacitances Motorola Small–Signal Transistors, FETs and Diodes Device Data BC856AWT1,BWT1 BC857AWT1,BWT1 BC858AWT1,BWT1,CWT1 BC857/BC858 –1 –0.9 –0.8 –0.7 –0.6 –0.5 –0.4 –0.3 –0.2 –0.1 0 –50 –100 –200 – ...

Page 4

... 200 100 50 20 –20 –50 –100 Figure 12. Current–Gain – Bandwidth Product Motorola Small–Signal Transistors, FETs and Diodes Device Data –2.0 –5.0 –10 –20 –50 –100 –200 COLLECTOR CURRENT (mA) Figure 8. “On” Voltage – 125 C – ...

Page 5

... BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT –2.0 –1.0 –5.0 – COLLECTOR–EMITTER VOLTAGE (V) Figure 14. Active Region Safe Operating Area Motorola Small–Signal Transistors, FETs and Diodes Device Data BC856AWT1,BWT1 BC857AWT1,BWT1 BC858AWT1,BWT1,CWT1 P (pk DUTY CYCLE 5 ...

Page 6

... Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. Motorola Small–Signal Transistors, FETs and Diodes Device Data ...

Page 7

... 0.05 (0.002) H Motorola Small–Signal Transistors, FETs and Diodes Device Data BC856AWT1,BWT1 BC857AWT1,BWT1 BC858AWT1,BWT1,CWT1 PACKAGE DIMENSIONS CASE 419–02 ISSUE G SOT–323/SC–70 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES ...

Page 8

... Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 Motorola Small–Signal Transistors, FETs and Diodes Device Data *BC856AWT1/D* BC856AWT1/D ...

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