2SB1176 Panasonic Semiconductor, 2SB1176 Datasheet
2SB1176
Manufacturer Part Number
2SB1176
Description
Silicon PNP epitaxial planar type
Manufacturer
Panasonic Semiconductor
Datasheet
1.2SB1176.pdf
(4 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SB1176(U)-P(Y)(TX)
Manufacturer:
PANASONIC/松下
Quantity:
20 000
Power Transistors
2SB1176
Silicon PNP epitaxial planar type
For voltage switching
Complementary to 2SD1746
■ Features
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: March 2003
• Low collector-emitter saturation voltage V
• Satisfactory linearity of forward current transfer ratio h
• Large collector current I
• I type package enabling direct soldering of the radiating fin to the
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
printed circuit board, etc. of small electronic equipment
2. * : Rank classification
Parameter
Rank
Parameter
h
FE2
T
C
90 to 180
a
= 25°C
Q
C
Symbol
V
V
V
= 25°C ± 3°C
Symbol
T
V
V
I
P
h
I
T
V
CBO
CEO
EBO
C
CP
I
I
h
C
stg
CE(sat)
BE(sat)
C
FE2
130 to 260
CBO
EBO
t
t
j
f
CEO
FE1
stg
t
on
= 25°C
T
f
*
CE(sat)
P
−55 to +150
Rating
I
V
V
V
V
I
I
V
I
V
C
C
C
C
−130
−80
−10
150
1.3
CB
EB
CE
CE
CE
CC
−7
−5
15
= −10 mA, I
= −4 A, I
= −4 A, I
= −2 A, I
SJD00052AED
= −5 V, I
= −2 V, I
= −2 V, I
= −10 V, I
= −100 V, I
= −50 V
FE
B
B
B1
Conditions
Unit
= − 0.2 A
= − 0.2 A
C
C
C
°C
°C
W
= − 0.2 A, I
V
V
V
A
A
B
C
= 0
= − 0.1 A
= −2 A
E
= 0
= − 0.5 A, f = 10 MHz
= 0
B2
= 0.2 A
Note) Self-supported type package is also prepared.
1
7.0
4.6
Min
−80
45
90
2
±0.3
±0.4
3
2.3
1.1
0.75
3.0
2.0
0.13
0.13
Typ
±0.2
0.5
30
±0.1
±0.2
±0.2
±0.1
0.4
− 0.5
Max
−1.5
−10
−50
260
±0.1
3.5
±0.2
I-G1 Package
1: Base
2: Collector
3: Emitter
Unit: mm
0˚ to 0.15˚
0.9
0˚ to 0.15˚
MHz
Unit
±0.1
µA
µA
µs
µs
µs
V
V
V
1
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2SB1176 Summary of contents
Page 1
... Power Transistors 2SB1176 Silicon PNP epitaxial planar type For voltage switching Complementary to 2SD1746 ■ Features • Low collector-emitter saturation voltage V • Satisfactory linearity of forward current transfer ratio h • Large collector current I C • I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment ■ ...
Page 2
... (1)T =Ta C (2)Without heat sink (P =1.3W ( 120 160 ( °C ) Ambient temperature T a BE(sat) C −100 −10 25˚C T =–25˚C −1 C 100˚C − 0.1 − 0.01 − 0.01 − 0.1 −1 − Collector current I C V ...
Page 3
... −1 10 −4 −3 −2 − Time t (s) t (1)Without heat sink (2)With a 50×50×2mm Al heat sink (1) ( SJD00052AED 2SB1176 3 ...
Page 4
Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...