2SB1554 Panasonic Semiconductor, 2SB1554 Datasheet
2SB1554
Manufacturer Part Number
2SB1554
Description
Silicon PNP epitaxial planar type(For power amplification)
Manufacturer
Panasonic Semiconductor
Datasheet
1.2SB1554.pdf
(3 pages)
Power Transistors
2SB1554
Silicon PNP epitaxial planar type
For power amplification
*
h
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
FE1
Features
High forward current transfer ratio h
Allowing automatic insertion with radial taping
Absolute Maximum Ratings
Electrical Characteristics
Rank
h
FE1
Rank classification
Parameter
Parameter
80 to 160
T
Ta=25 C
C
Q
=25 C
120 to 240
Symbol
V
V
V
I
I
I
P
T
T
CP
C
B
P
C
j
stg
CBO
CEO
EBO
I
I
I
V
h
h
V
V
f
t
t
t
on
stg
f
CBO
CEO
EBO
T
FE1
FE2
(T
Symbol
CEO
CE(sat)
BE(sat)
FE
C
*
(T
which has satisfactory linearity
200 to 400
=25˚C)
–55 to +150
C
=25˚C)
Ratings
O
–60
–60
–20
150
–8
–4
–2
15
2
V
V
V
I
V
V
I
I
V
I
I
V
C
C
C
C
B1
CB
CE
EB
CE
CE
CE
CC
= –10mA, I
= –2A, I
= –2A, I
= –2A,
= –100mA, I
= –50V, I
= –15V, I
= –4V, I
= –4V, I
= –10V, I
= –60V, I
= –50V
B
B
Unit
Conditions
C
C
˚C
˚C
= –100mA
= –100mA
W
V
V
V
A
A
A
B
C
C
E
B
= – 0.8A
= –2A
= 0
= 0
= 0
= – 0.5A, f = 1MHz
= 0
B2
= 100mA,
0.35 0.1
C1.0
2.5 0.2
min
–60
80
30
1 2 3
10.0 0.2
2.5 0.2
0.25
0.65 0.1
0.55 0.1
typ
0.4
0.6
1.05 0.1
25
1.2 0.1
MT4 Type Package
90
max
–1.0
–1.5
5.0 0.1
–10
–50
–10
400
1.0
0.55 0.1
1:Base
2:Collector
3:Emitter
Unit: mm
2.25 0.2
C1.0
MHz
Unit
V
V
V
A
A
A
s
s
s
1
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2SB1554 Summary of contents
Page 1
... Power Transistors 2SB1554 Silicon PNP epitaxial planar type For power amplification Features High forward current transfer ratio h Allowing automatic insertion with radial taping Absolute Maximum Ratings Parameter Symbol Collector to base voltage V CBO Collector to emitter voltage V CEO Emitter to base voltage V EBO Peak collector current ...
Page 2
... V =–50V =25˚ stg 0.1 0.03 0.01 0 –1 –2 –3 –4 –5 Collector current 2SB1554 V — I CE(sat) C –100 –30 –10 –3 –1 – 0.3 – 0.1 T =100˚C C –25˚C 25˚C – 0.03 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 –1 – ...
Page 3
... Power Transistors R 10000 Note: R was measured at Ta=25˚C and under natural convection. th (1) Without heat sink (2) With a 50 1000 100 10 1 0.1 –4 –3 –2 – Time — t th(t) 50 2mm Al heat sink (1) ( 2SB1554 4 3 ...