KSH13007W

Manufacturer Part NumberKSH13007W
DescriptionNPN SILICON TRANSISTOR
ManufacturerSHANTOU HUASHAN
KSH13007W datasheet
 
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Shantou Huashan Electronic Devices Co.,Ltd.
█ HIGH VOLTAGE SWITCH MODE APPLICATION
█ ABSOLUTE MAXIMUM RATINGS(T
T
——Storage Temperature………………………… -55~150℃
stg
T
——Junction Temperature……………………………… 150℃
j
P
——Collector Dissipation(T
C
V
——Collector-Base Voltage…………………………… 700V
CBO
V
——Collector-Emitter Voltage………………………… 400V
CEO
V
——Emitter-Base Voltage……………………………… 9V
EBO
I
——Collector Current(DC)……………………………… 8A
C
I
——Collector Current(Pulse)…………………………… 16A
C
I
——Base Current……………………………………………4A
B
█ 电参数
=25℃)
(T
a
Symbol
BV
Collector-Emitter Sustaining Voltage
CEO
I
Emitter-Base Cutoff Current
EBO
H
FE(1)
H
FE(2)
V
Collector- Emitter Saturation Voltage
CE(sat1)
V
CE(sat2)
V
CE(sat3)
V
Base- Emitter Saturation Voltage
BE(
)
sat1
V
BE(
)
sat2
Cob
Output Capacitance
f
Current Gain-Bandwidth Product
T
t
ON
t
STG
t
F
█ h
Classification
FE
H1
10—16
www.DataSheet.in
=25℃)
a
=25℃)…………………… 80W
c
Characteristics
Min
400
DC Current Gain
10
5
4
Turn On time
Storage Time
Fall Time
H2
H3
14—21
19—26
N P N S I L I C O N T R A N S I S T O R
KSH13007W
TO-263(D2PAK)
1―
Base,B
2―Collector,C
3―Emitter, E
Typ
Max
Unit
Test Conditions
V
I
=10mA, I
C
V
=9V, I
1
mA
EB
V
=5V, I
40
CE
V
=5V, I
30
CE
I
=2A, I
1
V
C
I
=5A, I
2
V
C
I
=8A, I
3
V
C
I
=2A, I
1.2
V
C
I
=5A, I
1.6
V
C
V
=10V, f=0.1MHz z
110
pF
CB
V
=10V, I
CE
1.6
uS
Vcc=125V,Ic=5A
3
uS
I
=I
=1A
B1
B2
0.7
uS
H4
H5
24—31
29—40
=0
B
=0
C
=2A
C
=5A
C
=400mA
B
=1A
B
=2A
B
=0.4A
B
=1A
B
=500mA
C

KSH13007W Summary of contents

  • Page 1

    ... Min 400 DC Current Gain Turn On time Storage Time Fall Time H2 H3 14—21 19— KSH13007W TO-263(D2PAK) 1― Base,B 2―Collector,C 3―Emitter, E Typ Max Unit Test Conditions V I =10mA ...

  • Page 2

    ... Shantou Huashan Electronic Devices Co.,Ltd. www.DataSheet. KSH13007W ...

  • Page 3

    ... Shantou Huashan Electronic Devices Co.,Ltd. www.DataSheet. KSH13007W ...