KSH13007W SHANTOU HUASHAN, KSH13007W Datasheet
KSH13007W
Manufacturer Part Number
KSH13007W
Description
NPN SILICON TRANSISTOR
Manufacturer
SHANTOU HUASHAN
Datasheet
1.KSH13007W.pdf
(3 pages)
www.DataSheet.in
█ h
█ HIGH VOLTAGE SWITCH MODE APPLICATION
█ ABSOLUTE MAXIMUM RATINGS（T
█ 电参数
V
V
H
H
V
V
V
T
T
P
V
V
V
I
I
I
BV
Symbol
C
C
B
BE(
BE(
C
FE（1）
FE（2）
stg
j
CE(sat1)
CE(sat2)
CE(sat3)
CBO
CEO
EBO
I
——Collector Current（DC）……………………………… 8A
——Collector Current（Pulse）…………………………… 16A
——Base Current……………………………………………4A
——Junction Temperature……………………………… 150℃
Cob
t
——Collector Dissipation（T
EBO
t
STG
FE
f
——Storage Temperature………………………… -55~150℃
ON
t
CEO
T
F
——Collector-Base Voltage…………………………… 700V
——Collector-Emitter Voltage………………………… 400V
——Emitter-Base Voltage……………………………… 9V
sat1
sat2
Shantou Huashan Electronic Devices Co.,Ltd.
Classification
)
)
10—16
（T
H1
Collector- Emitter Saturation Voltage
Current Gain-Bandwidth Product
Base- Emitter Saturation Voltage
Collector-Emitter Sustaining Voltage
a
=25℃）
Emitter-Base Cutoff Current
Output Capacitance
DC Current Gain
Turn On time
Storage Time
Characteristics
Fall Time
14—21
c
=25℃）…………………… 80W
H2
19—26
H3
Min
400
10
a
5
4
=25℃）
110
Typ
24—31
H4
Max
1.2
1.6
1.6
0.7
N P N S I L I C O N T R A N S I S T O R
40
30
1
1
2
3
3
KSH13007W
TO-263（D2PAK）
Unit
1―
2―Collector，C
3―Emitter, E
mA
pF
uS
uS
uS
V
V
V
V
V
V
29—40
Base，B
H5
V
V
Vcc=125V,Ic=5A
I
CB
I
B1
CE
C
I
V
V
I
=10V, f=0.1MHz z
=2A, I
C
I
I
I
Test Conditions
C
V
=I
=10V, I
C
C
C
CE
CE
=2A, I
=10mA, I
EB
=5A, I
=8A, I
=5A, I
B2
=5V, I
=5V, I
=9V, I
=1A
B
=400mA
B
C
B
B
B
=0.4A
=500mA
C
C
=1A
=2A
=1A
C
=2A
=5A
B
=0
=0
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KSH13007W Summary of contents
Page 1
... Min 400 DC Current Gain Turn On time Storage Time Fall Time H2 H3 14—21 19— KSH13007W TO-263（D2PAK） 1― Base，B 2―Collector，C 3―Emitter, E Typ Max Unit Test Conditions V I =10mA ...
Page 2
... Shantou Huashan Electronic Devices Co.,Ltd. www.DataSheet. KSH13007W ...
Page 3
... Shantou Huashan Electronic Devices Co.,Ltd. www.DataSheet. KSH13007W ...