2N3057A Semicoa Semiconductor, 2N3057A Datasheet - Page 2

• Manufacturer Part Number: 2N3057A
• Description: Chip Type 2C3019 Geometry 4500 Polarity PNP
• Manufacturer: Semicoa Semiconductor

Collector-Base Breakdown Voltage
I
Collector-Emitter Breakdown Voltage
I
Emitter-Base Breakdown Voltage
I
Collector-Emitter Cutoff Current
V
Emitter-Base Cutoff Current
V
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Short Circuit Forward Current Transfer Ratio
Magnitude of Common Emitter Short Circuit
Open Circuit Output Capacitance
Input Capacitance, Output Open Circuited
Collecor-Base Time Constant
Noise Figure
Pulse Response
OFF Characteristics
ON Characteristics
Small Signal Characteristics
Switching Characteristics
C
C
E
CE
EB
= 100 µA
= 100 µA
= 30 mA
= 5 V
= 90 V
I
I
I
I
I
I
I
I
I
Forward Current Transfer Ratio
V
V
V
V
V
15 ns, 50 ohm input pulse
C
C
C
C
C
C
C
C
C
CE
CB
EB
CE
CE
= 10 mA, V
= 500 mA, V
= 1 A, V
= 150 mA, I
= 150 mA, V
= 0.1 mA, V
= 150 mA, I
= 500 mA, I
= 1 mA, V
= 2.0 V, I
= 10 V, I
= 10 V, I
= 10 V, I
= 10 V, I
CE
CE
C
E
C
C
= 10 V (pulse test)
C
CE
B
B
B
CE
= 0, 100 kHz < f < 1 MHz
= 50 mA, f = 200 MHz
= 10 mA, f = 79.8 MHz
= 100 µA, R
CE
CE
= 5 V, f = 1 kHz
= 0, 100 kHz < f < 1 MHz
= 15 mA (pulse test)
= 15 mA (pulse test)
= 50 mA (pulse test)
= 10 V (pulse test)
= 10 V
= 10 V (pulse test)
= 10 V
g
T
= 1 kOhm
C
Electrical Characteristics
= 25
o
C unless otherwise specified
Symbol
Symbol
Symbol
Symbol
V
V
V
t
V
V
V
AC h
ON+
(BR)CBO
(BR)CEO
(BR)EBO
I
I
C
CE(sat)1
CE(sat)2
r
h
h
h
h
h
|h
EBO
C
CES
BE(sat)
b'
NF
FE1
FE2
FE3
FE4
FE5
OBO
IBO
FE
C
t
OFF
C
FE
|
Data Sheet No. 2N3057A
Min
140
Min
Min
7.0
Min
100
80
---
---
5.0
50
90
50
15
---
---
---
80
---
---
---
---
---
Max
Max
Max
Max
300
200
200
400
400
---
---
---
10
10
0.2
0.5
1.1
---
---
20
12
60
30
4
Unit
Unit
Unit
Unit
V dc
V dc
V dc
nA
nA
---
---
---
---
---
pF
pF
dB
ns
---
---
ps
V
V
V