ISL6597 Intersil Corporation, ISL6597 Datasheet

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ISL6597

Manufacturer Part Number
ISL6597
Description
Dual Synchronous Rectified MOSFET Drivers
Manufacturer
Intersil Corporation
Datasheet
Dual Synchronous Rectified MOSFET
Drivers
The ISL6597 integrates two ISL6596 drivers and is
optimized to drive two independent power channels in a
synchronous-rectified buck converter topology. These
drivers, combined with an Intersil multiphase PWM
controller, form a complete high efficiency voltage regulator
solution.
The IC is biased by a single low voltage supply (5V),
minimizing driver switching losses in high MOSFET gate
capacitance and high switching frequency applications.
Each driver is capable of driving a 3nF load with less than
10ns rise/fall time. Bootstrapping of the upper gate driver is
implemented via an internal low forward drop diode,
reducing implementation cost, complexity, and allowing the
use of higher performance, cost effective N-Channel
MOSFETs. Adaptive shoot-through protection is integrated
to prevent both MOSFETs from conducting simultaneously.
The ISL6597 features 4A typical sink current for the lower
gate driver, enhancing the lower MOSFET gate hold-down
capability during PHASE node rising edge, preventing power
loss caused by the self turn-on of the lower MOSFET due to
the high dV/dt of the switching node.
The ISL6597 also features an input that recognizes a high-
impedance state, working together with Intersil multi-phase
3.3V or 5V PWM controllers to prevent negative transients
on the controlled output voltage when operation is
suspended. This feature eliminates the need for the schottky
diode that may be utilized in a power system to protect the
load from negative output voltage damage.
Ordering Information
Add “-T” suffix for tape and reel.
NOTE: Intersil Pb-free plus anneal products employ special Pb-free
material sets; molding compounds/die attach materials and 100%
matte tin plate termination finish, which are RoHS compliant and
compatible with both SnPb and Pb-free soldering operations. Intersil
Pb-free products are MSL classified at Pb-free peak reflow
temperatures that meet or exceed the Pb-free requirements of
IPC/JEDEC J STD-020.
ISL6597CRZ
NUMBER
(Note)
PART
65 97CRZ
MARKING
PART
®
RANGE
0 to +70 16 Ld 4x4 QFN L16.4x4
TEMP.
(°C)
1
AMD® is a registered trademark of Advanced Micro Devices, Inc. All other trademarks mentioned are the property of their respective owners.
Data Sheet
PACKAGE
(Pb-Free)
DWG. #
PKG.
1-888-INTERSIL or 1-888-468-3774
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
Features
• 5V Quad N-Channel MOSFET Drives for Two
• Adaptive Shoot-Through Protection
• Programmable Deadtime for Efficiency Optimization
• Diode Emulation for Efficiency and Pre-Biased Startup
• 0.4Ω On-Resistance and 4A Sink Current Capability
• Supports High Switching Frequency
• Low V
• Low Bias Supply Current
• Support 3.3V and 5V PWM Input
• Enable Input and Power-On Reset
• QFN Package
• Pb-Free Plus Anneal Available (RoHS Compliant)
Applications
• Core Voltage Supplies for Intel® and AMD®
• High Frequency Low Profile High Efficiency DC/DC
• High Current Low Voltage DC/DC Converters
• Synchronous Rectification for Isolated Power Supplies
Related Literature
• Technical Brief TB389 “PCB Land Pattern Design and
• Technical Brief TB363 “Guidelines for Handling and
November 22, 2006
Synchronous Rectified Bridges
- Fast Output Rise and Fall
- Ultra Low Tri-State Hold-Off Time (20ns)
- Compliant to JEDEC PUB95 MO-220 QFN-Quad Flat
- Near Chip-Scale Package Footprint; Improves PCB
Microprocessors
Converters
Surface Mount Guidelines for QFN (MLFP) Packages”
Processing Moisture Sensitive Surface Mount Devices
(SMDs)
No Leads-Product Outline
Utilization and Thinner in Profile
F
Internal Bootstrap Diode
|
Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright Intersil Americas Inc. 2006. All Rights Reserved
ISL6597
FN9165.0

Related parts for ISL6597

ISL6597 Summary of contents

Page 1

... N-Channel MOSFETs. Adaptive shoot-through protection is integrated to prevent both MOSFETs from conducting simultaneously. The ISL6597 features 4A typical sink current for the lower gate driver, enhancing the lower MOSFET gate hold-down capability during PHASE node rising edge, preventing power loss caused by the self turn-on of the lower MOSFET due to the high dV/dt of the switching node ...

Page 2

... LD QFN) TOP VIEW GND 17 LGATE1 2 11 PGND PVCC ISL6597 PVCC SHOOT- THROUGH PROTECTION PVCC1 PGND PVCC SHOOT- THROUGH PROTECTION PVCC PGND PAD UGATE1 BOOT1 BOOT2 UGATE2 BOOT1 UGATE1 PHASE1 CHANNEL 1 LGATE1 PGND BOOT2 ...

Page 3

... Typical Application - Multiphase Converter Using ISL6597 Gate Drivers COMP FB V VSEN CC ISEN1 PWM1 PGOOD EN PWM2 ISEN2 MAIN CONTROL ISL65xx VID ISEN3 FS/DIS PWM3 PWM4 GND ISEN4 3 ISL6597 BOOT1 +3.3V UGATE1 VCTRL PHASE1 +5V LGATE1 +3.3V PVCC DUAL DRIVER VCC ISL6597 BOOT2 EN UGATE2 PWM1 PHASE2 ...

Page 4

... Tri-State Upper Threshold Tri-State Shutdown Holdoff Time SWITCHING TIME (Note 3, See Figure 1) UGATE Rise Time LGATE Rise Time UGATE Fall Time 4 ISL6597 Thermal Information Thermal Resistance (Notes 1 and 2) QFN Package . . . . . . . . . . . . . . . . . . Maximum Junction Temperature . . . . . . . . . . . . . . . . . . . . . . +150° -0. (DC) Maximum Storage Temperature Range . . . . . . . . . .-65°C to +150°C -0. (< ...

Page 5

... PWM Input section under DESCRIPTION for further details. Connect this pin to the PWM output of the controller. 17 PAD Connect this pad to the power ground plane (PGND) via thermally enhanced connection. 5 ISL6597 = 0°C to +70°C, unless otherwise noted (Continued) A SYMBOL TEST CONDITIONS t ...

Page 6

... MOSFET due to high dV/dt of the switching node. Tri-State PWM Input A unique feature of the ISL6597 is the programmable PWM ] logic threshold set by the control pin (VCTRL) voltage. The FL VCTRL pin should connect to the controller’s VCC so that the PWM logic thresholds follow with the VCC voltage level ...

Page 7

... PWM line of ISL6597 (assuming an Intersil PWM controller is used). Bootstrap Considerations This driver features an internal bootstrap diode. Simply adding an external capacitor across the BOOT and PHASE pins completes the bootstrap circuit. The following equation helps select a proper bootstrap capacitor size: Q GATE ≥ ...

Page 8

... Figure implemented to prevent the bootstrap capacitor from 8 ISL6597 overcharging, exceeding the device rating. Low-profile MOSFETs, such as Direct FETs and multi-SOURCE leads D devices (SO-8, LFPAK, PowerPAK), have low parasitic lead GD inductances and are preferred ...

Page 9

... PCB capacitances are also not taken into account. These equations are provided for guidance purpose only. Therefore, the actual coupling effect should be examined using a very high impedance (10MΩ or greater) probe to ensure a safe design margin. 9 ISL6597 dV ⋅ ⋅ V ------- ...

Page 10

... However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see www.intersil.com 10 ISL6597 L16.4x4 16 LEAD QUAD FLAT NO-LEAD PLASTIC PACKAGE (COMPLIANT TO JEDEC MO-220-VGGC ISSUE C) ...

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