FTP18N06 IPS, FTP18N06 Datasheet

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FTP18N06

Manufacturer Part Number
FTP18N06
Description
N-Channel MOSFET
Manufacturer
IPS
Datasheet
www.DataSheet4U.com
Absolute Maximum Ratings
• DC Motor Control
• UPS
• Class D Amplifier
• RoHS Compliant
• Low ON Resistance
• Low Gate Charge
• Peak Current vs Pulse Width Curve
• Inductive Switching Curves
Ordering Information
Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” Table may cause permanent damage to the device.
Thermal Resistance
V
I
I
I
P
V
E
I
dv/dt
T
T
T
©
R
R
N-Channel MOSFET
Applications:
D
D
DM
AS
Features:
L
PKG
J
DSS
D
GS
AS
PART NUMBER
@ 100
θJC
θJA
2006 InPower Semiconductor Co., Ltd.
and T
Symbol
FTP18N06
Symbol
STG
o
C
Junction-to-Case
Junction-to-Ambient
Parameter
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current, V
Power Dissipation
Derating Factor above 25
Gate-to-Source Voltage
Single Pulse Avalanche Engergy
L=500 µH, I
Pulsed Avalanche Engergy
Peak Diode Recovery dv/dt
Maximum Temperature for Soldering
Operating Junction and Storage
Temperature Range
PACKAGE
TO-220
Leads at 0.063in (1.6mm) from Case for 10 seconds
Package Body for 10 seconds
D
T c = 25
=21.5A
Parameter
Min.
--
--
o
FTP18N06
C unless otherwise specified
BRAND
GS
@ 10V
Typ.
o
C
--
--
Max.
1.0
62
(NOTE *1)
(NOTE *2)
(NOTE *3)
Units
o
C /W
V
60V
.
DSS
G
D
S
TO-220
Not to Scale
Pb
Water cooled heatsink, P
1 cubic foot chamber, free air
a peak junction temperature of +175
R
Lead Free Package and Finish
DS(ON)
Maximum
-55 to 175
Figure 3
Figure 6
Figure 8
18 mΩ
150
±20
115
300
260
1.0
3.0
60
59
FTP18N06 REV. B Oct. 2006
Test Conditions
(Max.)
G
FTP18N06
D
adjusted for
Units
W/
V/ns
mJ
D
59A
S
o
W
V
A
V
C
I
o
D
C
o
C

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FTP18N06 Summary of contents

Page 1

... Figure 3 Figure 6 150 1.0 ±20 115 Figure 8 3.0 300 260 -55 to 175 Units Test Conditions Water cooled heatsink peak junction temperature of +175 cubic foot chamber, free air FTP18N06 REV. B Oct. 2006 I D 59A D S Units V/ adjusted for ...

Page 2

... mΩ Max. Units -- -- 59.6 12.6 nC 13.8 Max. Units 9 FTP18N06 REV. B Oct. 2006 Page =0V, I =250µ =250µA D =60V =48V =150 =+20V -20V GS Test Conditions =10V, I =36A GS ...

Page 3

... C unless otherwise specified J Min. Typ < =+175 C DD DSS J Max. Units Test Conditions 59 A Integral pn-diode in MOSFET 236 A I =59A =59A, di/dt=100 A/µs 135 nC F FTP18N06 REV. B Oct. 2006 Page =0V ...

Page 4

... I = 14A 28A PULSE DURATION = 250 µS 25 DUTY FACTOR = 0.5% MAX Gate-to-Source Voltage ( FTP18N06 REV. B Oct. 2006 Page θJC 1E+01 150 175 ...

Page 5

... Time in Avalanche (s) AV Typical Drain-to-Source ON Resistance vs Junction Temperature PULSE DURATION = 250 µs DUTY FACTOR = 0.5% MAX V = 10V 15A GS D -75 -50 - 100 125 150 T , Junction Temperature ( J FTP18N06 REV. B Oct. 2006 Page 150 T C – ---------------------- 125 10E+0 -V )+1] DSS ...

Page 6

... C oss ≅ rss = 0.01 0 Drain Voltage (V) DS Figure 16. Typical Body Diode Transfer Characteristics 180 160 140 120 100 0.3 0.5 0.7 0 Source-to-Drain Voltage (V) SD FTP18N06 REV. B Oct. 2006 Page 100 125 150 175 iss C oss C rss 10 100 1.1 1.3 ...

Page 7

... Figure 19. Resistive Switching Test Circuit © 2006 InPower Semiconductor Co., Ltd D.U.T. V GS(TH D.U. Miller Region Figure 18. Gate Charge Waveform 90% 10 d(ON) rise d(OFF Figure 20. Resistive Switching Waveforms FTP18N06 REV. B Oct. 2006 Page fall ...

Page 8

... InPower Semiconductor Co., Ltd. Current Pump Series Switch (MOSFET Commutating Diode Figure 24. Unclamped Inductive Switching Waveforms di/dt = 100A Figure 22. Diode Reverse Recovery Waveform FTP18N06 REV. B Oct. 2006 Page µ DSS t AV ...

Page 9

... A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system affect its safety or effectiveness. © 2006 InPower Semiconductor Co., Ltd. FTP18N06 REV. B Oct. 2006 Page ...

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