FTP18N06 IPS, FTP18N06 Datasheet - Page 4

• Manufacturer Part Number: FTP18N06
• Description: N-Channel MOSFET
• Manufacturer: IPS

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©
2006 InPower Semiconductor Co., Ltd.
1.00
0.10
0.01
0.00
200
100
220
180
160
140
120
140
120
100
160
20
80
20
80
60
40
60
40
0
0
1E-05
0
25
PULSE DURATION = 250 µS
DUTY FACTOR = 0.5% MAX
T
1%
Figure 4. Typical Output Characteristics
50%
20%
10%
Figure 2.
Duty Factor
2%
single pulse
C
= 25
50
o
C
V
DS
T
, Drain-to-Source Voltage ( V )
C
Maximum Power Dissipation
vs Case Temperature
, Case Temperature (
75
1E-04
Figure 1. Maximum Effective Thermal Impedance, Junction-to-Case
100
5
125
V
V
V
V
V
o
GS
GS
GS
GS
GS
C )
= 6V
= 4V
= 3.5V
= 3V
= 4.5V
1E-03
150
t
p
, Rectangular Pulse Duration (s)
175
10
1E-02
Figure 5.
50
30
25
15
60
50
20
10
45
40
35
20
70
40
30
Figure 3.
0
25
3
1E-01
Typical Drain-to-Source ON Resistance
vs Gate Voltage and Drain Current
4
50
Maximum Continuous Drain Current
vs Case Temperature
V
GS
T
C
, Gate-to-Source Voltage ( V )
5
, Case Temperature (
75
6
I
I
I
D
D
D
NOTES:
DUTY FACTOR: D=t1/t2
PEAK T
= 55 A
100
= 14A
= 28A
PULSE DURATION = 250 µS
DUTY FACTOR = 0.5% MAX
T
C
1E+00
= 25
FTP18N06 REV. B Oct. 2006
Page 4 of 9
7
J
P
=P
DM
o
C
125
DM
8
x Z
o
t
C )
1
θJC
t
2
150
x
9
1E+01
175
10