FTP18N06 IPS, FTP18N06 Datasheet - Page 6

• Manufacturer Part Number: FTP18N06
• Description: N-Channel MOSFET
• Manufacturer: IPS

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©
2006 InPower Semiconductor Co., Ltd.
1000
1.20
1.15
1.10
1.05
1.00
0.95
0.90
100
10
12
10
8
6
4
2
0
1
-75 -50 -25 0.
Figure 11.
1
0
Figure 13.
T
Single Pulse
OPERATION IN THIS AREA MAY BE LIMITED BY R
Figure 15.
J
= MAX RATED, T
V
10
T
DS
V
V
V
Q
J
DS
DS
DS
, Junction Temperature (
, Drain-to-Source Voltage (V)
Typical Breakdown Voltage vs
Junction Temperature
G
Maximum Forward Bias Safe
Operating Area
=15V
=30V
=45V
, Total Gate Charge (nC)
C
Typical Gate Charge
vs Gate-to-Source Voltage
= 25
20
25
o
C
50
10
75 100 125 150
30
V
I
o
D
C)
GS
= 250 µA
40
I
DS(ON)
D
= 0V
= 59A
10µs
100
175
50
10000
1000
160
120
100
100
180
140
1.0
0.7
0.6
0.5
1.2
1.1
0.9
0.8
10
80
40
20
60
0
-75 -50 -25
0.01
0.3
Figure 12.
Figure 16.
V
I
V
C iss = C gs + C gd
C oss ≅ C ds + C gd
C rss = C gd
D
Figure 14.
GS
GS
= 250 µA
= 0V, f = 1MHz
= V
0.5
V
DS
SD
T
0.1
J
, Junction Temperature (
, Source-to-Drain Voltage (V)
Typical Threshold Voltage vs
Junction Temperature
Typical Body Diode Transfer
Characteristics
0.0
V
DS
0.7
Typical Capacitance vs
Drain-to-Source Voltage
, Drain Voltage (V)
2
50
1
0.9
FTP18N06 REV. B Oct. 2006
Page 6 of 9
75
100
1.1
o
10
C)
125 150
C iss
C rss
C oss
V
GS
1.3
= 0V
100
175