FTP18N06 IPS, FTP18N06 Datasheet - Page 2

• Manufacturer Part Number: FTP18N06
• Description: N-Channel MOSFET
• Manufacturer: IPS

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OFF Characteristics
ON Characteristics
Dynamic Characteristics
Resistive Switching Characteristics
BV
∆BV
I
I
R
V
gfs
©
C
C
C
Q
Q
Q
DSS
GSS
t
t
t
t
d(ON)
rise
d(OFF)
fall
GS(TH)
DS(ON)
iss
oss
rss
g
gs
gd
2006 InPower Semiconductor Co., Ltd.
Symbol
DSS
Symbol
Symbol
Symbol
DSS
/
∆ T
J
Static Drain-to-Source On-Resistance,
Figure 9 and 10
Gate Threshold Voltage, Figure 12
Forward Transconductance
Drain-to-Source Breakdown Voltage
BreakdownVoltage Temperature
Coefficient, Figure 11
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
T
T
J
J
=25
Parameter
Parameter
=25
Parameter
Parameter
Essentially independent of operating temperature
o
C unless otherwise specified
o
C unless otherwise specified
Essentially independent of operating temperature
Min.
Min.
Min.
60
Min.
--
--
--
--
--
--
--
--
--
--
2.0
--
--
--
--
--
--
--
0.069
Typ.
1460
Typ.
39.7
Typ.
420
8.4
9.2
Typ.
90
9.5
--
--
--
--
--
61
72
87
16
36
--
Max.
Max.
-100
Max.
250
100
59.6
12.6
13.8
Max.
25
--
--
--
--
--
4.0
--
--
--
--
18
--
Units
V/
Units
Units
Units
µA
nA
nC
pF
V
mΩ
ns
o
V
S
C
FTP18N06 REV. B Oct. 2006
Page 2 of 9
V
V
Reference to 25
V
V
Test Conditions
GS
V
V
DS
Test Conditions
DS
DS
Test Conditions
Test Conditions
GS
DS
=0V, I
=V
=60V, V
=48V, V
V
V
f =1.0MHz
I
T
V
D
=10V, I
=15V, I
V
Figure 14
Figure 15
V
V
V
GS
R
V
GS
(NOTE *4)
(NOTE *4)
J
I
=250µA
I
GS
DS
GS
DS
DD
D
GS
=150
GS
D
G
=+20V
=59A
=
=59A
=9.1Ω
=25V
=10V
, I
=30V
=30 V
=10V
-20V
=0V
D
D
=250µA
o
GS
GS
= 250 µA
D
D
C
=36A
=59A
=0V
=0V
o
C,