FTP18N06 IPS, FTP18N06 Datasheet - Page 3

• Manufacturer Part Number: FTP18N06
• Description: N-Channel MOSFET
• Manufacturer: IPS

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Notes:
*1. T
*2. Repetitive rating; pulse width limited by maximum junction temperature.
*3. I
*4. Pulse width < 380µs; duty cycle < 2%
Source-Drain Diode Characteristics
©
I
I
V
t
Q
S
SM
rr
2006 InPower Semiconductor Co., Ltd.
SD
Symbol
rr
SD
J
= +25
= 59A, di/dt < 100 A/µs, V
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
o
C to +175
o
C
Parameter
DD
< BV
T
J
DSS
=25
, T
o
C unless otherwise specified
J
=+175
Min.
--
--
--
--
--
o
C
Typ.
57
90
--
--
--
Max.
236
135
1.5
59
86
Units
nC
ns
A
A
V
FTP18N06 REV. B Oct. 2006
Page 3 of 9
I
F
=59A, di/dt=100 A/µs
Test Conditions
Integral pn-diode
I
S
=59A, V
in MOSFET
V
GS
=0V
GS
=0V