FTP18N06

Manufacturer Part NumberFTP18N06
DescriptionN-Channel MOSFET
ManufacturerIPS
FTP18N06 datasheet
 


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Figure 1. Maximum Effective Thermal Impedance, Junction-to-Case
Duty Factor
1.00
www.DataSheet4U.com
50%
20%
10%
0.10
2%
1%
0.01
single pulse
0.00
1E-05
1E-04
Figure 2.
Maximum Power Dissipation
vs Case Temperature
160
140
120
100
80
60
40
20
0
50
75
25
100
T
, Case Temperature (
C
Figure 4. Typical Output Characteristics
220
PULSE DURATION = 250 µS
200
DUTY FACTOR = 0.5% MAX
o
T
= 25
C
C
180
160
140
120
100
80
60
40
20
0
0
V
, Drain-to-Source Voltage ( V )
DS
©
2006 InPower Semiconductor Co., Ltd.
1E-03
1E-02
t
, Rectangular Pulse Duration (s)
p
125
150
175
C )
o
V
= 6V
GS
V
= 4.5V
GS
V
= 4V
GS
V
= 3.5V
GS
V
= 3V
GS
5
10
P
DM
NOTES:
DUTY FACTOR: D=t1/t2
PEAK T
=P
J
DM
1E-01
1E+00
Figure 3.
Maximum Continuous Drain Current
vs Case Temperature
70
60
50
40
30
20
10
0
25
50
75
100
125
T
, Case Temperature (
C
Figure 5.
Typical Drain-to-Source ON Resistance
vs Gate Voltage and Drain Current
50
45
40
I
= 14A
D
I
= 28A
D
I
= 55 A
D
35
30
PULSE DURATION = 250 µS
25
DUTY FACTOR = 0.5% MAX
o
T
= 25
C
C
20
15
3
4
5
6
7
8
V
, Gate-to-Source Voltage ( V )
GS
FTP18N06 REV. B Oct. 2006
Page 4 of 9
t
1
t
2
x Z
x
θJC
1E+01
150
175
C )
o
9
10