FTP18N06

Manufacturer Part NumberFTP18N06
DescriptionN-Channel MOSFET
ManufacturerIPS
FTP18N06 datasheet
 


1
Page 1
2
Page 2
3
Page 3
4
Page 4
5
Page 5
6
Page 6
7
Page 7
8
Page 8
9
Page 9
Page 5/9

Download datasheet (317Kb)Embed
PrevNext
www.DataSheet4U.com
10000
TRANSCONDUCTANCE
MAY LIMIT CURRENT IN
THIS REGION
1000
100
10
V
= 10V
GS
1
1E-6
10E-6
Figure 7. Typical Transfer Characteristics
40
PULSE DURATION = 250 µs
DUTY FACTOR = 0.5% MAX
35
V
= 10 V
DS
30
25
20
15
o
+175
C
o
10
+25
C
o
-55
C
5
0
1.5
2.0
2.5
V
, Gate-to-Source Voltage ( V )
GS
Figure 9.
Typical Drain-to-Source ON
Resistance vs Drain Current
50
PULSE DURATION = 10 µs
DUTY FACTOR = 0.5% MAX
T
=25°C
C
40
30
20
10
0
50
100
I
, Drain Current (A)
D
©
2006 InPower Semiconductor Co., Ltd.
Figure 6. Maximum Peak Current Capability
100E-6
1E-3
10E-3
t
, Pulse Width (s)
p
1000
10
3.0
3.5
4.0
Figure 10.
2.5
2.0
1.5
1.0
V
=10V
GS
0.5
150
200
250
FOR TEMPERATURES
o
ABOVE 25
C DERATE PEAK
CURRENT AS FOLLOWS:
I
=
I 25
100E-3
1E+0
Figure 8.
Unclamped Inductive
Switching Capability
If R≠ 0: t
= (L/R) ln[(I
×R)/(1.3BV
AV
AS
If R= 0: t
= (L×I
)/(1.3BV
AV
AS
DSS
R equals total Series resistance of Drain circuit
STARTING T
o
STARTING T
= 150
C
J
10
1
1E-6
10E-6
100E-6
1E-3
t
, Time in Avalanche (s)
AV
Typical Drain-to-Source ON Resistance
vs Junction Temperature
PULSE DURATION = 250 µs
DUTY FACTOR = 0.5% MAX
V
= 10V, I
= 15A
GS
D
-75 -50 -25
0
25 50
75 100 125 150
T
, Junction Temperature (
J
FTP18N06 REV. B Oct. 2006
Page 5 of 9
150 T C
----------------------
125
10E+0
-V
)+1]
DSS
DD
-V
)
DD
o
= 25
C
J
10E-3
100E-3
175
o
C )