FTP18N06 IPS, FTP18N06 Datasheet - Page 5

• Manufacturer Part Number: FTP18N06
• Description: N-Channel MOSFET
• Manufacturer: IPS

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©
2006 InPower Semiconductor Co., Ltd.
10000
1000
100
10
40
35
30
25
20
15
50
20
10
10
40
30
1
5
0
1E-6
1.5
0
Figure 7. Typical Transfer Characteristics
Figure 9.
PULSE DURATION = 250 µs
DUTY FACTOR = 0.5% MAX
V
V
DS
PULSE DURATION = 10 µs
DUTY FACTOR = 0.5% MAX
T
GS
C
=25°C
= 10 V
= 10V
2.0
V
50
GS
+175
, Gate-to-Source Voltage ( V )
Typical Drain-to-Source ON
Resistance vs Drain Current
+25
-55
I
10E-6
D
, Drain Current (A)
o
o
o
C
C
C
100
2.5
TRANSCONDUCTANCE
MAY LIMIT CURRENT IN
THIS REGION
3.0
150
100E-6
Figure 6. Maximum Peak Current Capability
200
3.5
V
GS
=10V
250
4.0
1E-3
t
p
, Pulse Width (s)
1000
Figure 10.
10E-3
10
2.5
2.0
1.5
0.5
1.0
10
1
1E-6
-75 -50 -25
STARTING T
Figure 8.
Typical Drain-to-Source ON Resistance
vs Junction Temperature
10E-6
T
100E-3
J
J
t
= 150
AV
, Junction Temperature (
If R≠ 0: t
If R= 0: t
R equals total Series resistance of Drain circuit
0
, Time in Avalanche (s)
100E-6
o
C
Unclamped Inductive
Switching Capability
AV
25 50
AV
= (L/R) ln[(I
= (L×I
FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:
PULSE DURATION = 250 µs
DUTY FACTOR = 0.5% MAX
V
GS
AS
= 10V, I
FTP18N06 REV. B Oct. 2006
Page 5 of 9
I
)/(1.3BV
STARTING T
1E-3
=
75 100 125 150
AS
1E+0
I 25
×R)/(1.3BV
o
C DERATE PEAK
DSS
D
= 15A
150 T C
----------------------
-V
o
10E-3
J
C )
DD
125
= 25
–
DSS
)
o
-V
C
DD
)+1]
100E-3
10E+0
175