FTP18N06

Manufacturer Part NumberFTP18N06
DescriptionN-Channel MOSFET
ManufacturerIPS
FTP18N06 datasheet
 


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Figure 11.
Typical Breakdown Voltage vs
Junction Temperature
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1.20
1.15
1.10
1.05
1.00
0.95
0.90
-75 -50 -25 0.
25
T
, Junction Temperature (
J
Figure 13.
Maximum Forward Bias Safe
Operating Area
1000
OPERATION IN THIS AREA MAY BE LIMITED BY R
100
10
o
T
= MAX RATED, T
= 25
C
J
C
Single Pulse
1
1
V
, Drain-to-Source Voltage (V)
DS
Figure 15.
Typical Gate Charge
vs Gate-to-Source Voltage
12
10
V
=15V
DS
8
V
=30V
DS
V
=45V
DS
6
4
2
0
0
10
20
Q
, Total Gate Charge (nC)
G
©
2006 InPower Semiconductor Co., Ltd.
V
= 0V
GS
I
= 250 µA
D
50
75 100 125 150
175
o
C)
DS(ON)
10µs
10
100
I
= 59A
D
30
40
50
Figure 12.
Typical Threshold Voltage vs
Junction Temperature
1.2
1.1
1.0
0.9
0.8
0.7
V
= V
GS
DS
0.6
I
= 250 µA
D
0.5
-75 -50 -25
0.0
2
50
75
T
, Junction Temperature (
J
Figure 14.
Typical Capacitance vs
Drain-to-Source Voltage
10000
1000
100
V
= 0V, f = 1MHz
GS
C iss = C gs + C gd
C oss ≅ C ds + C gd
C rss = C gd
10
0.01
0.1
1
V
, Drain Voltage (V)
DS
Figure 16.
Typical Body Diode Transfer
Characteristics
180
160
140
120
100
80
60
40
20
0
0.3
0.5
0.7
0.9
V
, Source-to-Drain Voltage (V)
SD
FTP18N06 REV. B Oct. 2006
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100
125 150
175
o
C)
C iss
C oss
C rss
10
100
V
= 0V
GS
1.1
1.3