2SC1252

Manufacturer Part Number2SC1252
Description2SC1252
ManufacturerAdvanced Semiconductor
2SC1252 datasheet
 
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NPN SILICON HIGH FREQUENCY TRANSISTOR
DESCRIPTION:
2SC1252
The
is a High Frequency
Transistor, Designed for Wide Band
Amplifier Applications up to 500 MHz.
FEATURES INCLUDE:
High Gain -17 dB Typ. @ 200 MHz
Low NF - 3.0 dB Typ. @ 200 MHz
Hermetic TO-39 Package
MAXIMUM RATINGS
I
400 mA
C
45 V
V
CB
25 V
V
CE
5 W @ T
= 25 °C
P
C
DISS
-65 to +200 °C
T
J
-65 to +200 °C
T
STG
35 °C/W
JC
CHARACTERISTICS
T
= 25 °C
C
SYMBOL
TEST CONDITIONS
BV
I
= 5.0 mA
CEO
C
BV
I
= 100 A
CBO
C
I
V
= 30 V
CBO
CE
I
V
= 2.0 V
EBO
EB
h
V
= 10 V
FE
CE
V
= 15 V
CE
f
t
V
= 15 V
CE
C
V
= 15 V
OB
CB
G
V
= 15 V
PE
CE
NF
V
= 15 V
CE
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1202 FAX (818) 765-3004
MINIMUM
I
= 50 mA
C
I
= 15 mA
f = 200 MHz
1200
C
I
= 70 mA
1400
C
f = 1.0 MHz
I
= 50 mA
f = 200 MHz
C
I
= 30 mA
f = 200 MHz
C
Specifications are subject to change without notice.
PACKAGE STYLE TO-39
1 = Emitter
3 & 4 = Collector (Case)
TYPICAL
MAXIMUM
25
45
100
500
20
200
3.0
15
17
3.0
4.0
2SC1252
2 = Base
UNITS
V
V
nA
nA
---
MHz
pF
dB
dB
REV. B
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