2SC4093 NEC, 2SC4093 Datasheet

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2SC4093

Manufacturer Part Number
2SC4093
Description
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD
Manufacturer
NEC
Datasheet

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Document No. P10365EJ3V1DS00 (3rd edition)
Date Published March 1997 N
Printed in Japan
DESCRIPTION
noise amplifier at VHF, UHF and CATV band.
contatined in a 4 pins mini-mold package which enables high-isolation
gain.
FEATURES
• Low Noise
• High Power Gains
ORDERING INFORMATION
* Please contact with responsible NEC person, if you require evaluation
ABSOLUTE MAXIMUM RATINGS (T
2SC4093-T1
2SC4093-T2
sample.
Unit sample quantity shall be 50 pcs. (Part No.: 2SC4093)
NF = 1.1 dB TYP. @ V

The 2SC4093 is an NPN silicon epitaxial transistor designed for low
It has large dynamic range and good current characteritics, and is
NUMBER
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
S
PART
21e

2
= 13 dB TYP. @ V
3 Kpcs/Reel. Embossed tape 8 mm wide.
3 Kpcs/Reel. Embossed tape 8 mm wide.
QUANTITY
NPN SILICON EPITAXIAL TRANSISTOR
CE
MICROWAVE LOW NOISE AMPLIFIER
= 10 V, I
Pin3 (Base), Pin4 (Emitter) face to perforation side
of the tape.
Pin1 (Collector), Pin2 (Emitter) face to perforation
side of the tape.
CE
= 10 V, I
V
V
V
I
P
T
T
C
C
j
stg
CBO
CEO
EBO
T
= 7 mA, f = 1.0 GHz
C
4 PINS MINI MOLD
= 20 mA, f = 1.0 GHz
DATA SHEET
DATA SHEET
A
PACKING STYLE
= 25

65 to +150
 
100
200
150
3.0
20
12
C)
mW
mA


V
V
V
C
C
SILICON TRANSISTOR
PACKAGE DIMENSIONS
2SC4093
PIN CONNECTIONS
(Units: mm)
1.
2.
3.
4.
Collector
Emitter
Base
Emitter
5
5
2.8
1.5
+0.2
+0.2
0.3
0.1
5
5
©
1991

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2SC4093 Summary of contents

Page 1

... MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC4093 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has large dynamic range and good current characteritics, and is contatined pins mini-mold package which enables high-isolation gain ...

Page 2

... MAX. UNIT  1 1 120 250 7.0 GHz 0.6 0. 1.1 2.0 dB R28/RBH * R28 125 to 250 * Old Specification / New Specification 2SC4093 TEST CONDITIONS 1.0 MHz mA ...

Page 3

... V -Collector to Base Voltage-V CB INSERTION GAIN vs. COLLECTOR CURRENT 0 INSERTION GAIN, MAXIMUM GAIN vs. FREQUENCY 0.1 0 2SC4093 f = 1.0 GHz 1.0 GHz -Collector Current- max 21e 0 ...

Page 4

... 19.635 111.0 0.033 10.412 93.3 0.041 7.454 84.4 0.060 5.318 75.5 0.073 4.450 68.8 0.094 3.571 61.4 0.103 3.253 54.6 0.127 2.737 49.0 0.137 2.618 43.0 0.165 2.237 38.4 0.170 2SC4093     47.2 0.772 28.1  43.2 0.600 34.9  38.6 0.526 37.7  40.5 0.471 39.8  40.5 0.441 41.6  44.3 0.428 45.4  45.6 0.406 49.4  44.8 0.388 56.1  49.3 0.380 61 ...

Page 5

... 0.2 GHz C 0.2 GHz 0 -FREQUENCY 12e freq GHz (Step 200 MHz) 120 60 30 150 S 21e 0 180 150 60 120 2SC4093 12e 2.0 GHz 0.2 GHz 0 0 0.04 0.08 0.12 0.16 0 ...

Page 6

... [MEMO] 6 2SC4093 ...

Page 7

... [MEMO] 2SC4093 7 ...

Page 8

... The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. 2SC4093 M4 96. 5 ...

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