2SC4094 NEC, 2SC4094 Datasheet

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2SC4094

Manufacturer Part Number
2SC4094
Description
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD
Manufacturer
NEC
Datasheet

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Document No. P10366EJ1V1DS00 (1st edition)
Date Published March 1997 N
Printed in Japan
DESCRIPTION
low-noise and small signal amplifiers from VHF band to UHF band. Low-
noise figure, high gain, and high current capability achieve a very wide
dynamic range and excellent linearity.
passivated base surface process (DNP process) which is an NEC
proprietary new fabrication technique.
FEATURES
• NF = 1.2 dB TYP. @f = 1.0 GHz, V
ABSOLUTE MAXIMUM RATINGS (T
ELECTRICAL CHARACTERISTICS (T
h
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product
Feed-Back Capacitance
Insertion Power Gain
Maximum Available Gain
Noise Figure
FE

The 2SC4094 is an NPN epitaxial silicon transistor designed for use in
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Marking
Classification
S
Class
21e
h
FE
CHARACTERISTIC

2
= 15 dB TYP. @f = 1.0 GHz, V
R36/RCF *
50 to 100
R36
NPN SILICON EPITAXIAL TRANSISTOR
MICROWAVE LOW NOISE AMPLIFIER
R37/RCG *
80 to 160
R37
SYMBOL
V
V
V
I
P
T
T

C
j
stg
MAG
CBO
CEO
EBO
T
S
I
I
CE
h
C
NF
CBO
EBO
f
21e
FE
T
re
= 8 V, I

4 PINS MINI MOLD
CE
2
This achieved by direct nitride
DATA SHEET
DATA SHEET
A
A
= 8 V, I
R38/RCH *
125 to 250
= 25
= 25

MIN.
C
R38
50
13
65 to +150
= 7 mA
 
200
150
C
1.5
 
20
10
65
C)
C)
= 20 mA
TYP.
0.25
1.2
15
17
9
* Old Specification / New Specification
mW
mA


V
V
V
C
C
MAX.
250
1.0
1.0
0.8
2.0
UNIT
GHz


pF
dB
dB
dB
SILICON TRANSISTOR
A
A
V
V
V
V
V
V
V
V
CB
EB
CE
CE
CB
CE
CE
CE
= 1 V, I
= 10 V, I
= 8V, I
= 8 V, I
= 10 V, I
= 8 V, I
= 8 V, I
= 8 V, I
PACKAGE DIMENSIONS
2SC4094
TEST CONDITIONS
C
C
PIN CONNECTIONS
C
C
C
C
(Units: mm)
= 20 mA
1.
2.
3.
4.
E
E
= 0
= 7 mA, f = 1.0 GHz
= 20 mA, f = 1.0 GHz
= 20 mA, f = 1.0 GHz
= 20 mA, f = 1.0 GHz
= 0
= 0, f = 1.0 MHz
Collector
Emitter
Base
Emitter
5
5
2.8
1.5
+0.2
+0.2
0.3
0.1
©
5
5
1987

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2SC4094 Summary of contents

Page 1

... MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC4094 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. Low- noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity ...

Page 2

... V -Collector to Base Voltage-V CB INSERTION GAIN vs. COLLECTOR CURRENT MAXIMUM AVAILABLE GAIN, INSERTION GAIN vs. FREQUENCY 0.1 0 2SC4094 f = 1.0 GHz 1.0 GHz -Collector Current- MAG 21e 0 ...

Page 3

... 23.331 121.6 0.021 13.501 99.2 0.033 9.535 86.4 0.046 7.083 77.5 0.056 5.604 69.3 0.070 4.722 63.5 0.084 3.982 56.8 0.091 3.517 51.1 0.104 3.094 45.6 0.116 2.882 42.7 0.127 2SC4094     65.4 0.882 19.1  53.4 0.723 29.5  46.2 0.611 33.4  43.9 0.564 34.5  43.8 0.515 37.6  43.5 0.488 39.6  41.2 0.459 44.1  42.8 0.443 45.9  40.1 0.428 51 ...

Page 4

... GHz 0.2 GHz -FREQUENCY 12e CONDITION V 120 60 S 21e 30 150 0 180 150 60 120 2SC4094 50 0.2 GHz = 20 freq GHz (Step 200 MHz 2GHz 12e 0.2 GHz 0 0 0.04 0.08 0.12 0.16 0 ...

Page 5

... [MEMO] 2SC4094 5 ...

Page 6

... [MEMO] 6 2SC4094 ...

Page 7

... [MEMO] 2SC4094 7 ...

Page 8

... The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. 2SC4094 M4 96. 5 ...

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