2SC4095 NEC, 2SC4095 Datasheet

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2SC4095

Manufacturer Part Number
2SC4095
Description
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD
Manufacturer
NEC
Datasheet

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Document No. P10367EJ2V1DS00 (2nd edition)
Date Published March 1997 N
Printed in Japan
DESCRIPTION
low-noise and small signal amplifiers from VHF band to UHF band.
2SC4095 features excellent power gain with very low-noise figures.
2SC4095 employs direct nitiride passivated base surface process (DNP
process) which is an NEC proprietary new fabrication technique which
provides excellent noise figures at high current values.
excellent associated gain and very wide dynamic range.
FEATURES
• NF = 1.8 dB TYP. @ f = 2.0 GHz, V
ABSOLUTE MAXIMUM RATINGS (T
ELECTRICAL CHARACTERISTICS (T
h
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product
Feed-Back Capacitance
Insertion Power Gain
Maximum Available Gain
Noise Figure
FE

The 2SC4095 is an NPN epitaxial silicon transistor designed for use in
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Marking
Classification
S
Class
21e
h
FE
CHARACTERISTIC

2
= 9.5 dB TYP. @ f = 2.0 GHz, V
R46/RDF *
50 to 100
R46
NPN SILICON EPITAXIAL TRANSISTOR
MICROWAVE LOW NOISE AMPLIFIER
R47/RDG *
80 to 160
R47
SYMBOL
V
V
V
I
P
T
T

C
j
stg
MAG
CBO
CEO
EBO
T
S
I
I
h
C
NF
CBO
EBO
CE
f
21e
FE
T
re

4 PINS MINI MOLD
= 6 V, I
2
CE
DATA SHEET
DATA SHEET
A
A
R48/RDH *
125 to 250
= 6 V, I
= 25
= 25

MIN.
7.5
R48
50
C
65 to +150
= 5 mA
 
200
150
1.5
 
20
10
35
C)
C)
C
= 10 mA
TYP.
0.25
100
9.5
1.8
10
12
* Old Specification / New Specification
mW
mA


V
V
V
This allows
C
C
MAX.
250
1.0
1.0
0.8
3.0
UNIT
GHz


pF
dB
dB
dB
SILICON TRANSISTOR
A
A
V
V
V
V
V
V
V
V
CB
EB
CE
CE
CB
CE
CE
CE
= 1 V, I
PACKAGE DIMENSIONS
= 10 V, I
= 6 V, I
= 6 V, I
= 10 V, I
= 6 V, I
= 6 V, I
= 6 V, I
2SC4095
TEST CONDITIONS
PIN CONNECTIONS
C
C
C
C
C
C
(Units: mm)
1.
2.
3.
4.
E
E
= 0
= 5 mA, f = 2.0 GHz
= 10 mA
= 10 mA f = 1.0 GHz
= 10 mA, f = 2.0 GHz
= 10 mA, f = 2.0 GHz
= 0
= 0, f = 1.0 MHz
Collector
Emitter
Base
Emitter
5
5
2.8
1.5
+0.2
+0.2
0.3
0.1
5
5
©
1987

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2SC4095 Summary of contents

Page 1

... MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC4095 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. 2SC4095 features excellent power gain with very low-noise figures. 2SC4095 employs direct nitiride passivated base surface process (DNP process) which is an NEC proprietary new fabrication technique which provides excellent noise figures at high current values ...

Page 2

... INSERTION GAIN vs. COLLECTOR CURRENT 0.2 0.5 I MAXIMUM AVAILABLE GAIN, INSERTION GAIN vs. FREQUENCY 0.1 0.2 2SC4095 f = 1.0 GHz 1.0 GHz f = 2.0 GHz -Collector Current- MAG 21e 0.5 1.0 2.0 3.0 ...

Page 3

... 18.685 137.9 0.023 12.702 115.2 0.029 9.895 102.8 0.046 7.275 92.3 0.049 6.261 85.1 0.067 5.038 77.4 0.070 4.597 71.0 0.088 3.927 64.8 0.094 3.743 58.8 0.113 3.233 54.5 0.115 2SC4095     53.6 0.946 12.8  66.2 0.876 20.7  54.7 0.816 26.4  56.0 0.743 30.9  49.4 0.689 33.0  47.9 0.654 35.7  48.5 0.604 37.7  42.1 0.581 41.5  46.4 ...

Page 4

... C 2 GHz 0.2 GHz 90 S -FREQUENCY 12e CONDITION V 120 60 30 150 S 21e 0 180 150 60 120 2SC4095 50 0.2 GHz 10 freq GHz (Step 200 MHz 2GHz 30 S 12e 0.2 GHz 0 0 0.04 ...

Page 5

... Soldering conditions  C or below seconds or below (210 C or higher), 1, Exposure limit*: None  C or below seconds or below (200 C or higher), 1, Exposure limit*: None  260 C or below, 10 seconds or below, 1, Exposure limit*: None  300 C or below, 3 seconds or below, None 2SC4095 Symbol IR30-00-1 VP15-00-1 WS60-00-1 5 ...

Page 6

... [MEMO] 6 2SC4095 ...

Page 7

... [MEMO] 2SC4095 7 ...

Page 8

... The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. 2SC4095 M4 96. 5 ...

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