2SC4095 NEC, 2SC4095 Datasheet
2SC4095
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2SC4095 Summary of contents
Page 1
... MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC4095 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. 2SC4095 features excellent power gain with very low-noise figures. 2SC4095 employs direct nitiride passivated base surface process (DNP process) which is an NEC proprietary new fabrication technique which provides excellent noise figures at high current values ...
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... INSERTION GAIN vs. COLLECTOR CURRENT 0.2 0.5 I MAXIMUM AVAILABLE GAIN, INSERTION GAIN vs. FREQUENCY 0.1 0.2 2SC4095 f = 1.0 GHz 1.0 GHz f = 2.0 GHz -Collector Current- MAG 21e 0.5 1.0 2.0 3.0 ...
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... 18.685 137.9 0.023 12.702 115.2 0.029 9.895 102.8 0.046 7.275 92.3 0.049 6.261 85.1 0.067 5.038 77.4 0.070 4.597 71.0 0.088 3.927 64.8 0.094 3.743 58.8 0.113 3.233 54.5 0.115 2SC4095 53.6 0.946 12.8 66.2 0.876 20.7 54.7 0.816 26.4 56.0 0.743 30.9 49.4 0.689 33.0 47.9 0.654 35.7 48.5 0.604 37.7 42.1 0.581 41.5 46.4 ...
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... C 2 GHz 0.2 GHz 90 S -FREQUENCY 12e CONDITION V 120 60 30 150 S 21e 0 180 150 60 120 2SC4095 50 0.2 GHz 10 freq GHz (Step 200 MHz 2GHz 30 S 12e 0.2 GHz 0 0 0.04 ...
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... Soldering conditions C or below seconds or below (210 C or higher), 1, Exposure limit*: None C or below seconds or below (200 C or higher), 1, Exposure limit*: None 260 C or below, 10 seconds or below, 1, Exposure limit*: None 300 C or below, 3 seconds or below, None 2SC4095 Symbol IR30-00-1 VP15-00-1 WS60-00-1 5 ...
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... [MEMO] 6 2SC4095 ...
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... [MEMO] 2SC4095 7 ...
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... The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. 2SC4095 M4 96. 5 ...