RB160A90 ROHM Co. Ltd., RB160A90 Datasheet

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RB160A90

Manufacturer Part Number
RB160A90
Description
Schottky Barrier Diode
Manufacturer
ROHM Co. Ltd.
Datasheet
Diodes
Schottky barrier diode
RB160A90
General rectification
1) Cylindrical mold type. (MSR)
2) High I surge capability.
3) Low I
4) High ESD.
Silicon epitaxial planar
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current (*1)
Forward current surge peak (t=100µs)
Junction temperature
Storage temperature
(*1) Mounted on epoxy board. 180°Half sine wave
Forward voltage
Reverse current
ESD break down voltage
Features
Construction
Electrical characteristics (Ta=25°C)
Applications
Absolute maximum ratings (Ta=25°C)
Parameter
R
.
Parameter
Symbol
ESD
V
I
R
F
Min.
0.54
5
Symbol
-
Tstg
V
I
V
FSM
Io
Tj
Dimensions (Unit : mm)
RM
Taping specifications (Unit : mm)
R
ROHM : MSR
H1
Typ.
0.64
5.00
H2
-
29±1
Max.
0.73
BLUE
100
L1
-
-55 to +150
Limits
150
Manufacture Date
90
90
50
A
1
Unit
µA
kV
V
3.0±0.2
F
CATHODE BAND
E
L2
I
V
C=100pF,R=1.5kΩ forward and reverse : 1 time
F
=1.0A
R
=90V
Unit
V
V
A
A
29±1
φ0.6±0.1
C
D
B
BROWN
Conditions
*H1(6mm):BROWN
Symbol
|L1-L2|
H1
H2
B
C
D
E
Rev.D
T-31   52.4±1.5
T-32
T-31   5.0±0.5
T-31
T-31
T-32
T-31
T-32
T-31
T-32
T-31
T-32
T-31
T-32
T-31
T-32
T-31
T-32
φ2.5±0.2
RB160A90
Standard dimension
value(mm)
26.0
5.0±0.3
1.0 max.
1/2A±1.2
1/2A±0.4
±0.7
0.2 max.
6.0±0.5
5.0±0.5
1.5 max.
0.4 max.
0
+0.4
0
1/3

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RB160A90 Summary of contents

Page 1

... FSM 150 Tj -55 to +150 Tstg Min. Typ. Max. Unit 0.54 0.64 0. 5.00 100 µ C=100pF,R=1.5kΩ forward and reverse : 1 time RB160A90 φ0.6±0.1 29±1 φ2.5±0.2 BROWN Standard dimension Symbol value(mm) T-31   52.4±1.5 A +0.4 T-32 26.0 B T-31   5.0±0.5 B T-31 5.0±0.3 T-31 C 1.0 max. T- T-32 T-31 1/2A±1.2 ...

Page 2

... DISPERSION MAP 1000 Mounted on epoxy board IF=0.5A Rth(j-a) IM=1mA Rth(j-l) time(ms) 100 td=300us Rth(j- 100 0.001 0.01 0 100 TIME:t(s) Rth-t CHARACTERISTICS RB160A90 1000 条件:f=1MHz f=1MHz 100 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 200 190 Ta=25℃ f=1MHz 180 VR=0V ...

Page 3

... ESD DISPERSION MAP D=t/T 2 VR=45V DC Tj=150℃ T 1.5 D=1/2 1 Sin(θ=180) 0 100 125 AMBIENT TEMPERATURE:Ta(℃) Derating Curve゙(Io-Ta) RB160A90 2 D=t/T 2 VR=45V DC T Tj=150℃ 1.5 D=1/2 1 Sin(θ=180) 0 100 125 150 CASE TEMPARATURE:Tc(℃) Derating Curve゙ ...

Page 4

Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...

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