FP2189 ETC, FP2189 Datasheet

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FP2189

Manufacturer Part Number
FP2189
Description
high performance 1-Watt HFET (Heterostructure FET) in a low-cost SOT-89 surfacemount
Manufacturer
ETC
Datasheet

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Product Features
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6620 • e-mail: sales@wj.com • Web site: www.wj.com
Specifications
1. I
2. Pinch-off voltage is measured when I
3. Test conditions unless otherwise noted: T = 25ºC, V
4. 3OIP measured with two tones at an output power of +15 dBm/tone separated by 1 MHz. The
Operation of this device above any of there parameters may cause permanent damage
50 – 4000 MHz
Up to +31 dBm P1dB
Up to +45 dBm Output IP3
High Drain Efficiency
19 dB Gain @ 900 MHz
MTBF >100 Years
SOT-89 SMT Package
DC Electrical Parameter
Saturated Drain Current
Transconductance, G
Pinch Off Voltage
Parameters
Frequency Range
Small Signal Gain, Gss
Output P1dB
Output IP3
Thermal Resistance
Absolute Maximum Ratings
Parameters
Operating Case Temperature
Storage Temperature
Maximum DC Power
RF Input Power (continuous)
dss
in an application circuit with Z
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
is measured with V
FP2189
1 Watt HFET
4
3
gs
2
, V
= 0 V, V
m
p
1
L
, I
ds
= Z
dss
= 3 V.
LOPT
ds
= 0.4 mA.
, Z
S
= Z
SOPT
Units
Units
The FP2189 is a high performance 1-Watt HFET
(Heterostructure FET) in a low-cost SOT-89 surface-
mount package. This device works optimally at a drain
bias of +8 V and 250 mA to achieve +45 dBm output
IP3 performance and an output power of +31 dBm at
1-dB compression.
The device conforms to WJ Communications’ long
history of producing high reliability and quality
components. The FP2189 has an associated MTBF of
greater than 100 years at a mounting temperature of
85°C. All devices are 100% RF & DC tested.
The product is targeted for use as driver amplifiers for
wireless infrastructure where high performance and high
efficiency are required.
°C/W
MHz
dBm
dBm
mA
mS
dB
V
DS
.
= 8 V, I
-40 to +125 °C
-40 to +85 °C
+20 dBm
DQ
Rating
Min
Min
50
4.0 W
= 250 mA, frequency = 900 MHz
Product Description
Typ
Typ
-2.0
+31
+45
500
350
15
Max
Max
4000
30
Typical Parameters
5.
6.
Ordering Information
Parameter
Frequency
S21
S11
S22
Output P1dB
Output IP3
Noise Figure
V
I
I
FP2189
FP2189-PCB900S
FP2189-PCB1900S
FP2189-PCB2140S
dq
dd
dd
6
Typical parameters represent performance in an application circuit.
I
current may increase as the output power is increased near its
compression point.
dq
at P1dB
Part No.
is the quiescent drain current at small signal output levels. The
The Communications Edge
Specifications and information are subject to change without notice
Preliminary Product Information
This document contains information on a new product.
Units
MHz
dBm
dBm
mA
mA
dB
dB
dB
dB
V
1-Watt HFET
(Available in Tape & Reel)
900 MHz Application Circuit
1900 MHz Application Circuit
2140 MHz Application Circuit
Functional Diagram
+30.3
+44.3
19.1
Output/Bias
915
250
260
-17
-10
4.2
+8
Description
Function
Ground
Ground
Input
1
5
Typical
+30.8
+44.2
1960
15.2
250
330
-16
3.5
4
2
+8
-8
3
Pin No.
TM
+31.4
+45.5
2140
13.8
May 2002
250
320
-23
4.5
+8
1
2
3
4
-9

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FP2189 Summary of contents

Page 1

... The device conforms to WJ Communications’ long history of producing high reliability and quality • SOT-89 SMT Package components. The FP2189 has an associated MTBF of greater than 100 years at a mounting temperature of 85°C. All devices are 100% RF & DC tested. The product is targeted for use as driver amplifiers for wireless infrastructure where high performance and high efficiency are required ...

Page 2

... FP2189 1 Watt HFET Typical Performance Data S-Parameters ( 250 mA, 25°C, Unmatched 50 ohm system Frequency 11 5 GHz 4 GHz 3 GHz 2 GHz 1 GHz Note: Measurements were made on the packaged device in a test fixture with 50 ohm input and output lines. The S-parameters that are shown are the de-embedded data down to the device leads and represents typical performance of the device. WJ Communications, Inc • ...

Page 3

... R1 100 Ω Ω 4.2) r The Communications Edge Preliminary Product Information S-Parameters vs Frequency S22 S11 800 850 900 950 Frequency (MHz) FP2189 Sot-89 L2 5.6 nH PIN 3 PIN PIN 2,4 Ref. Designator Length on .014” TM GETEK 135 ...

Page 4

... The Communications Edge Preliminary Product Information S-Parameters vs Frequency S22 S11 1850 1900 1950 2000 Frequency (MHz 250 mA C8 0.1 µ 1000 pF FP2189 Sot- OUT PIN PIN 2,4 1.5 pF Ref. Designator Length on .014” TM GETEK (mil ...

Page 5

... The Communications Edge Preliminary Product Information S-Parameters vs Frequency S22 S11 2050 2100 2150 2200 Frequency (MHz 250 mA C8 0.1 µF C6 1000 FP2189 Sot- OUT PIN 1 PIN PIN 2,4 1.2 pF Ref. Designator Length on .014” TM GETEK (mil) Z1 150 Z2 15 ...

Page 6

... PNP transistors. Thus the transistor emitter voltage adjusts the voltage incident at the gate of the FP2189 so that the device draws a constant current, regardless of the temperature. Two fixed voltage supplies are needed for operation. A Rohm dual transistor, UMT1N, and a dual-chip resistor (8.2 kΩ ...

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