BUP200 Siemens Semiconductor Group, BUP200 Datasheet
BUP200
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BUP200 Summary of contents
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IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Type BUP 200 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Gate-emitter voltage DC ...
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Maximum Ratings Parameter DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Thermal Resistance IGBT thermal resistance, chip case Electrical Characteristics Parameter Static Characteristics Gate threshold voltage 0 ...
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Electrical Characteristics Parameter Switching Characteristics, Inductive Load at T Turn-on delay time V = 600 100 Gon Rise time V = 600 ...
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Power dissipation tot C parameter: T 150 ° tot Safe operating area ...
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Typ. output characteristics ( ) parameter µ 125 ° Typ. saturation characteristics CE(sat) GE parameter °C j ...
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Typ. gate charge Gate parameter puls 400 Semiconductor Group Typ. ...
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Package Outlines Dimensions in mm Weight Semiconductor Group 7 BUP 200 Dec-06-1995 ...