BUP410D Siemens Semiconductor Group, BUP410D Datasheet

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BUP410D

Manufacturer Part Number
BUP410D
Description
IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode)
Manufacturer
Siemens Semiconductor Group
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BUP410D
Manufacturer:
INFINEON
Quantity:
11 500
IGBT With Antiparallel Diode
Type
BUP 410D
Semiconductor Group
• Low forward voltage drop
• High switching speed
• Low tail current
• Latch-up free
• Including fast free-wheel diode
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
R
Gate-emitter voltage
DC collector current
T
T
Pulsed collector current, t
T
T
Diode forward current
T
Pulsed diode current, t
T
Power dissipation
T
Chip or operating temperature
Storage temperature
C
C
C
C
C
C
C
GE
= 25 °C
= 90 °C
= 25 °C
= 90 °C
= 90 °C
= 25 °C
= 25 °C
= 20 k
Preliminary data
p
= 1 ms
p
= 1 ms
V
600V
CE
I
13A
C
1
Package
TO-220 AB
Symbol
V
V
V
I
I
I
I
P
T
T
C
Cpuls
F
Fpuls
j
stg
CE
CGR
GE
tot
Pin 1
G
Ordering Code
Q67040-A4425-A2
-55 ... + 150
-55 ... + 150
Values
± 20
600
600
13
26
16
11
72
50
8
Pin 2
C
BUP 410D
Dec-12-1996
Unit
V
A
W
°C
Pin 3
E

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BUP410D Summary of contents

Page 1

IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Type BUP 410D Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage ...

Page 2

Maximum Ratings Parameter DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Thermal Resistance Thermal resistance, chip case Diode thermal resistance, chip case Electrical Characteristics Parameter Static Characteristics Gate threshold voltage ...

Page 3

AC Characteristics Transconductance Input capacitance MHz CE GE Output capacitance ...

Page 4

Free-Wheel Diode Diode forward voltage ° Reverse recovery time -300 ...

Page 5

Power dissipation tot C parameter: T 150 ° tot Safe operating area ...

Page 6

Typ. output characteristics parameter µ ° 17V 10 15V I 13V C 9 11V ...

Page 7

Typ. switching time inductive load , T = 125° par 300 ± ...

Page 8

Typ. gate charge Gate parameter puls 100 Short circuit safe operating ...

Page 9

Typ. forward characteristics parameter =125° 0.0 0.5 1.0 1.5 Semiconductor Group Transient thermal impedance ...

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