GT40T301 Toshiba Semiconductor, GT40T301 Datasheet - Page 3

• Manufacturer Part Number: GT40T301
• Description: Insulated Gate Bipolar Transistor Silicon N Channel IGBT
• Manufacturer: Toshiba Semiconductor

100
100
80
60
40
20
10
80
60
40
20
0
8
6
4
2
0
0
0
0
0
Common emitter
V CE
Common emitter
Tc
Collector-emitter voltage V
25°C
5 V
Tc
Gate-emitter voltage V
Gate-emitter voltage V
2
4
4
125°C
25
V
4
8
8
I C
I
I
CE
C
C
25
– V
– V
10 A
40
– V
20
20
GE
CE
GE
40
12
12
6
15
60
GE
GE
80
CE
(V)
(V)
16
16
V GE
8
(V)
8 V
12
10
10
20
20
3
10
10
10
8
6
4
2
0
8
6
4
2
0
8
6
4
2
0
0
0
80
Common emitter
Tc
Common emitter
Tc
Common emitter
V GE
125°C
40
40°C
Gate-emitter voltage V
Gate-emitter voltage V
4
4
15 V
Case temperature Tc (°C)
0
V
V
V
CE (sat)
8
8
CE
CE
I C
40
I C
– V
– V
10 A
– Tc
GE
GE
10 A
20
12
12
40
80
GE
GE
60
20
80
(V)
(V)
I C
16
16
40
120
60
GT40T301
10 A
2002-01-18
80
80
60
40
20
160
20
20