GT40T301 Toshiba Semiconductor, GT40T301 Datasheet - Page 4

• Manufacturer Part Number: GT40T301
• Description: Insulated Gate Bipolar Transistor Silicon N Channel IGBT
• Manufacturer: Toshiba Semiconductor

0.05
0.03
0.01
300
100
0.5
0.3
0.1
0.5
0.3
30
20
10
10
50
30
10
0
5
3
1
5
3
1
0
0
1
(continuous)
*: Single nonrepetitive
Curves must be derated
linearly with increase in
temperature.
I C max (pulsed)*
Common emitter
V CC
R G
V GG
Tc
I C max
pulse
Tc
40
3
25°C
25°C
Collector-emitter voltage V
51
DC operation
600 V
10
15 V
200
Collector current I
V CE
Gate charge Q
80
10
Safe operating area
300
Switching time – I
V
CE
100 V
20
120
30
, V
10 ms*
GE
160
1 ms*
100
– Q
G
30
100 s*
C
G
(nC)
C
300
200
(A)
CE
t off
t f
Common
emitter
R L
Tc
10 s*
40
(V)
1000
t on
25°C
240
7.5
t r
3000
280
50
4
10000
5000
3000
1000
500
300
100
200
100
0.5
0.3
0.1
10
50
30
10
30
10
5
3
1
5
3
1
3
10
1
1
T j
V GE
R G
Common emitter
V CC
I C
V GG
Tc
Common emitter
V GE
f
Tc
1 MHz
125°C
Collector-emitter voltage V
51
Collector-emitter voltage V
40 A
3
25°C
25°C
30
15 V
600 V
0 V
15 V
5
3
Switching time – R
Reverse bias SOA
resistance R
10
5
100
C – V
Gate
30 50
10
CE
300
G
100
( )
G
CE
CE
30
t off
1000
t on
t r
t f
(V)
(V)
300 500 1000
50
GT40T301
C oes
C res
C ies
2002-01-18
3000
100